The concept of the present work has its genesis in 1969 during a short sabbatical with Professor Mott at the Cavendish. The objective of this book was to update the model of low- temperature oxidation as put forward by Cabrera and Mott in 1948- 1949. Oxidation kinetics change from fast linear to slow logarithmic with the completion of lateral island growth. It is at this point that the differentiation between network-forming (vitreous) and network-modifying (polycrystalline) oxides can be observed most clearly. This distinction forms a major theme of this book.
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Für höhere Schule und Studium
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Höhe: 236 mm
Breite: 160 mm
Dicke: 22 mm
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ISBN-13
978-0-471-87448-5 (9780471874485)
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Schweitzer Klassifikation
List of Tables; Symbols; Introduction; Rate Expressions for Oxide Growth; Structure of Vitreous Oxides; Charge Transport in Noncrystalline Oxides; Initial Oxide Formation; The Role of Interfaces; Formation of a Stable Oxide Film; Continued Growth of Three-Dimensional Oxide; Oxidaton of Silicon; Closing Summary; Index.