Silicon Carbide and Related Materials 2019

<ul><li>Preface</li><li>Chapter 1: Growth and Wafer Manufacturing</li><li>1.1: Bulk Crystal Growth</li><li>Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method</li><li>Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method</li><li>Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method</li><li>Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process</li><li>Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer</li><li>Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production</li><li>Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals</li><li>Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC</li><li>An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis</li><li>X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates</li><li>1.2: Epitaxial and Thin Film Growth</li><li>Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications</li><li>Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool</li><li>Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool</li><li>Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process</li><li>Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al</li><li>Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates</li><li>1.3: Growth of 3C-SiC Layer</li><li>Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth</li><li>3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress</li><li>Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC</li><li>Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon</li><li>Mono-Versus Poly-Crystalline SiC for Nuclear Applications</li><li>Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations</li><li>1.4: Etching and Wafer Machining</li><li>Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology</li><li>Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size</li><li>Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer</li><li>Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen</li><li>Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides</li><li>SiC Epitaxial Reactor Cleaning by ClF₃ Gas with the Help of Reaction Heat</li><li>Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals</li><li>A New Permanganate-Free Slurry for GaN-SiC CMP Applications</li><li>Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition</li><li>Chapter 2: Characterization and Defect Engineering</li><li>2.1: Fundamental and Characterization</li><li>Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region</li><li>Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC</li><li>Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons</li><li>Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCV)</li><li>Wurtzite SiC Formation in Plastic Deformed 3C and 6H</li><li>Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation</li><li>SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative Analysis</li><li>Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations</li><li>Resistivity Measurement of P⁺-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry</li><li>Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC</li><li>Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique</li><li>Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)</li><li>Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping</li><li>A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance</li><li>Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy</li><li>From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC</li><li>2.2: Point Defects and Quantum Technologies</li><li>Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC</li><li>Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment</li><li>Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes</li><li>Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC</li><li>Near Infrared Photoluminescence of N_CV_Si^- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles</li><li>The Effect of ?-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET</li><li>2.3: Extended Defects</li><li>4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System</li><li>Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers</li><li>Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer</li><li>Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers</li><li>BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE</li><li>Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching</li><li>TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth</li><li>Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers</li><li>Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage</li><li>Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress</li><li>Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE</li><li>Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth</li><li>Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence</li><li>Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance</li><li>Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions</li><li>Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test</li><li>2.4: Novel Materials and New Concepts</li><li>Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires</li><li>Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes</li><li>Defects Characterization of GaN Substrate with Hot Implant Process</li><li>Structural Characterization of a Ga₂O₃Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis</li><li>AFM Observation of Etch-Pit Shapes on ?-Ga₂O₃ (001) Surface Formed by Molten Alkali Etching</li><li>Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond</li><li>Graphene Quality Assessment Using an Entropy Approach of SEM Images</li><li>Chapter 3: MOS Gate Stacks and Device Processing</li><li>3.1: MOS Processing</li><li>Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC</li><li>Surface Treatment of 4H-SiC MOSFETs Prior to Al₂O₃ Deposition</li><li>Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition</li><li>Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET</li><li>4H-SiC Power VDMOSFET Manufacturing Utilizing POCl₃ Post Oxidation Annealing</li><li>Compatibility of POCl₃ Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs</li><li>3.2: MOS Characterization</li><li>Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs</li><li>Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO₂/4H-SiC Interface</li><li>Profiling with Depth Resolution of Sub-nm for SiO₂/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation</li><li>Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N₂ Annealing with Conductance Measurements</li><li>Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V</li><li>Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations</li><li>Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs</li><li>Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement</li><li>Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation</li><li>A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique</li><li>Ultrafast Pulsed <i>I-V</i> and Charge Pumping Interface Characterization of Low-Voltage <i>n</i>-Channel SiC MOSFETs</li><li>Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs</li><li>Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates</li><li>TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching Pperation</li><li>Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device</li><li>3.3: Device Processing</li><li>3x 10¹⁸ - 1 x 10¹⁹cm ^-3 Al⁺ Ion Implanted 4H-SiC: Annealing Time Effect</li><li>Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC</li><li>Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time</li><li>4H-SiC MOSFET Source and Body Laser Annealing Process</li><li>The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing</li><li>Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC</li><li>Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology</li><li>Development of SiC Etching by Chlorine Fluoride Gas</li><li>The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices</li><li>Chapter 4: Power Devices</li><li>4.1: MOSFETs</li><li>The IMOSFET: A Deeply-Scaled Fully-Self-Aligned Trench MOSFET</li><li>Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs</li><li>Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation</li><li>Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation</li><li>1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability</li><li>Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies</li><li>Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs</li><li>Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS</li><li>Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD</li><li>Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET</li><li>Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs</li><li>Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs</li><li>Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process</li><li>Avalanche Ruggedness Assessment of 1.2kV 45m? Asymmetric Trench SiC MOSFETs</li><li>Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors</li><li>SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study</li><li>Improved SiC MOSFET SPICE Model to Avoid Convergence Errors</li><li>Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs</li><li>1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop</li><li>Common-Drain Bidirectional 1200V SiC MOSFETs</li><li>Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs</li><li>4.2: Bipolar Devices, JFETs and Diodes</li><li>20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs</li><li>Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT</li><li>Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model</li><li>Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well</li><li>Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons</li><li>Short Circuit Ruggedness of 600 V SiC Trench JFETs</li><li>Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes</li><li>A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes</li><li>Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes</li><li>Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes</li><li>Chapter 5: Packaging and Applications</li><li>5.1: Packaging and Power Modules</li><li>Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices</li><li>Stress Test of Cascode Switch Using SiC Static Induction Transistor</li><li>Accelerated Testing of SiC Power Devices under High-Field Operating Conditions</li><li>Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche Stress</li><li>High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes</li><li>Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker</li><li>High-Performance SIP Half-Bridge IPM Based on 35m?/1200V SiC Stack-Cascode</li><li>Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging</li><li>Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics</li><li>High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs</li><li>The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter</li><li>5.2: Circuits and Applications</li><li>Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)</li><li>New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs</li><li>Impact of Proton Irradiation on Power 4H-SiC MOSFETs</li><li>Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier</li><li>Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure</li><li>Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs</li><li>Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV Detectors</li><li>Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges</li><li>High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET</li><li>Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications</li><li>Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply</li><li>Inrush Current Effects on SiC-MOSFETs for LLC Converter</li><li>Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs</li><li>Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits</li></ul>