Defects-Recognition, Imaging and Physics in Semiconductors XIV

<ul><li>Preface, Message and Committee</li><li>Chapter 1: Defects in SiC</li><li>Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography</li><li>Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography</li><li>Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy</li><li>Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers</li><li>Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide</li><li>Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing</li><li>Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings</li><li>Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method</li><li>Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC</li><li>Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers</li><li>Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-Si? under Electron Beam Irradiation</li><li>Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas</li><li>Defect Related Leakage Current Components in SiC Schottky Barrier Diode</li><li>Rapid Terahertz Imaging of Carrier Density of 3C-SiC</li><li>Chapter 2: Nitride Materials and Devices</li><li>Cathodoluminescence Study of Ammonothermal GaN Crystals</li><li>The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals</li><li>Defect Propagation from 3C-SiC to III-Nitride</li><li>Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer</li><li>Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs</li><li>Chapter 3: III-V Compounds and Devices</li><li>Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography</li><li>Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping</li><li>Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal</li><li>Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study</li><li>Defect Propagation in Broad-Area Diode Lasers</li><li>Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers</li><li>Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves</li><li>Chapter 4: Photovoltaics: From Material to Module</li><li>Lock-In Thermography and Related Topics in Photovoltaic Research</li><li>Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si</li><li>EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells</li><li>Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique</li><li>Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods</li><li>Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon</li><li>Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon</li><li>High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells</li><li>Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction</li><li>Structural Study of Small Angle Grain Boundaries in Multicrystalline Si</li><li>Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications</li><li>Change of the Characterization Techniques as Progress of CuInSe₂-Based Thin-Film PV Technology</li><li>Temperature Dependence of Linear Thermal Expansion of CuGaSe₂ Crystals</li><li>Reduction of Crack Formation in Transcription of Cu(In,Ga)Se₂ Thin Film Solar Cell Structure</li><li>Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode</li><li>2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module</li><li>Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module</li><li>Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure</li><li>Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers</li><li>Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation</li><li>Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects</li><li>Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy</li><li>DLTS Study of Pd-H Complexes in Si</li><li>Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements</li><li>Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities</li><li>Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region</li><li>Reliability Improvement in Silicon Dioxide</li><li>Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs</li><li>Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers</li><li>Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)</li><li>Effect of Si₃N₄ Coating on Strain and Fracture of Si Ingots</li><li>Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction</li><li>MicroRaman Spectroscopy of Si Nanowires: Influence of Size</li><li>Chapter 6: Functional Oxides and Other Materials</li><li>Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO₃ Bicrystal Interface Induced by Forming Process</li><li>Structural and Electronic Structure of SnO₂ by the First-Principle Study</li><li>XRD Investigation of the Crystalline Quality of Sn Doped ?-Ga₂O₃ Films Deposited by the RF Magnetron Sputtering Method</li><li>Improvement of the Crystalline Quality of <i>?</i>-Ga₂O₃ Films by High-Temperature Annealing</li><li>Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution</li><li>Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method</li><li>Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide</li><li>Evaluation of Ge_xSb_yTe_z Film Grown by Chemical Vapor Deposition</li></ul>