An Introduction to Surface Analysis by XPS and AES

Name: An Introduction to Surface Analysis by XPS and AES
Brand: Wiley-Blackwell
Price: 71.99 EUR
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John F. Watts John Wolstenholme(Autor*in)

Wiley-Blackwell (Verlag)

2. Auflage

Erschienen am 15. August 2019

288 Seiten

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Inhalt

Intro
Title Page
Copyright
Contents
Preface to First Edition
Prefaceto Second Edition
Acknowledgements
Chapter 1 Electron Spectroscopy: Some Basic Concepts:
1.1 Analysis of Surfaces
1.2 Notation
1.2.1 Spectroscopists' Notation
1.2.2 X-ray Notation
1.3 X-ray Photoelectron Spectroscopy
1.4 Auger Electron Spectroscopy (AES)
1.5 Scanning Auger Microscopy
1.6 The Depth of Analysis in Electron Spectroscopy
1.7 Comparison of XPS and AES/SAM
1.8 The Availability of Surface Analytical Equipment
Chapter 2 Electron Spectrometer Design
2.1 Introduction
2.2 The Vacuum System
2.3 X-ray Sources for XPS
2.3.1 Choice of X-ray Anode
2.3.2 X-ray Monochromators
2.3.3 Synchrotron Sources
2.4 The Electron Gun for AES
2.4.1 Electron Sources
2.4.1.1 Thermionic Emitter
2.4.1.2 Lanthanum Hexaboride Emitter
2.4.1.3 Cold Field Emitter
2.4.1.4 Hot Field Emitter
2.4.1.5 Comparison of Electron Emitters for AES
2.4.2 The Electron Column
2.4.3 Spot Size
2.5 Analysers for Electron Spectroscopy
2.5.1 The Cylindrical Mirror Analyser
2.5.2 The Hemispherical Sector Analyser
2.5.2.1 CAE Mode of Operation
2.5.2.2 CRR Mode of Operation
2.5.2.3 Comparison of CAE and CRR Modes
2.5.2.4 The Transfer Lens
2.5.3 Calibration of the Electron Spectrometer Energy Scale
2.6 Near Ambient Pressure XPS
2.7 Detectors
2.7.1 Channel Electron Multipliers
2.7.2 Microchannel Plates
2.7.3 Two-Dimensional Detectors
2.7.3.1 The Resistive-Anode Detector
2.7.3.2 The Delay-Line Detector
2.8 Small Area XPS
2.8.1 Lens-Defined Small Area XPS
2.8.2 Source-defined Small Area Analysis
2.9 XPS Imaging and Mapping
2.9.1 Serial Acquisition
2.9.2 Parallel Acquisition
2.9.2.1 Parallel Imaging Using a Hemispherical Spectrometer
2.9.2.2 Parallel Imaging Using a Spherical Mirror Analyser
2.9.2.3 Spatial Resolution and Chemical Imaging
2.10 Angle Resolved XPS
2.11 Automation
Chapter 3 The Electron Spectrum:: Qualitative and Quantitative Interpretation
3.1 Introduction
3.2 Qualitative Analysis
3.2.1 Unwanted Features in Electron Spectra
3.2.2 Data Acquisition
3.2.2.1 Core Level Spectra
3.2.2.2 Valence Band Spectra
3.3 Chemical State Information
3.3.1 X-ray Photoelectron Spectroscopy
3.3.2 Peak Fitting of XPS Spectra
3.3.3 Auger Electron Spectroscopy
3.3.4 X-AES
3.3.5 Chemical State Plots
3.3.6 Shakeup Satellites
3.3.7 Multiplet Splitting
3.3.8 Plasmons
3.4 Quantitative Analysis
3.4.1 Quantification in XPS
3.4.1.1 Calculating Atomic Concentration
3.4.1.2 Measuring Peak Intensity
3.4.2 Quantification in AES
Chapter 4 Compositional Depth Profiling
4.1 Introduction
4.2 Non-destructive Depth Methods
4.2.1 Measurements at a Single Emission Angle
4.2.2 Angle Resolved XPS Measurements
4.2.3 Measurement of Overlayer Thickness Using ARXPS
4.2.4 Elastic Scattering
4.2.5 Multilayer Thickness Calculations Using ARXPS
4.2.6 Compositional Depth Profiles from ARXPS Measurements
4.2.7 Variation of Analysis Depth with Electron Kinetic Energy
4.2.8 Background Analysis
4.3 Depth Profiling by Sputtering with Energetic Ions
4.3.1 The Sputtering Process
4.3.2 Experimental Method
4.3.3 The Nature of the Ion Beam
4.3.3.1 Noble Gas Ions
4.3.3.2 Cluster Ions
4.3.3.3 Metal Ions
4.3.4 Sputter Yield and Etch Rate
4.3.5 Factors Affecting the Etch Rate
4.3.5.1 Material
4.3.5.2 Ion Current
4.3.5.3 Ion Energy
4.3.5.4 Nature of the Ion Beam
4.3.5.5 Angle of Incidence
4.3.6 Factors Affecting the Depth Resolution
4.3.6.1 Ion Beam Characteristics
4.3.6.2 Crater Quality
4.3.6.3 Beam Impurities
4.3.6.4 Information Depth
4.3.6.5 Original Surface Roughness
4.3.6.6 Induced Roughness
4.3.6.7 Preferential Sputtering
4.3.6.8 Redeposition of Sputtered Material
4.3.7 Calibration
4.3.8 Ion Gun Design
4.3.8.1 Electron Impact Ion Guns
4.3.8.2 Argon-Cluster Ion Guns
4.3.8.3 Liquid Metal Ion Guns
4.4 Sectioning
4.4.1 FIB Sectioning
4.4.2 Angle Lapping
4.4.3 Ball Cratering
Chapter 5 Multi-technique Analysis
5.1 Introduction
5.2 Ultraviolet Photoelectron Spectroscopy (UPS)
5.3 Low Energy Ion Scattering Spectroscopy (LEISS)
5.4 Reflection Electron Energy Loss Spectroscopy (REELS)
5.4.1 Elastic Scattering
5.4.2 Inelastic Scattering
5.5 Work Function Measurements
5.6 Energy Dispersive X-ray Analysis (EDX)
Chapter 6 The Sample
6.1 Sample Handling
6.2 Sample Preparation
6.3 Sample Mounting
6.4 Sample Stability
6.5 Contamination and Damage During Analysis
6.6 Controlling Sample Charging
6.6.1 Sample Charging in XPS
6.6.2 Sample Charging in AES
Chapter 7 Applications of Electron Spectroscopy in Materials Science
7.1 Introduction
7.2 Metallurgy
7.2.1 Grain Boundary Segregation
7.2.2 Electronic Structure of Metallic Alloys
7.2.3 Surface Engineering
7.3 Corrosion Science
7.4 Ceramics
7.5 Microelectronics and Semiconductor Materials
7.5.1 Mapping Semiconductor Devices Using AES
7.5.2 XPS Failure Analysis of Microelectronic Devices
7.5.3 Depth Profiling of Semiconductor Materials
7.5.3.1 Transistor Gate Dielectrics
7.5.3.2 Inorganic Chemical State Profiling
7.5.3.3 Organic Semiconductor Profiling
7.6 Polymeric Materials
7.7 Adhesion Science
7.8 Nanotechnology
7.9 Biology
7.10 Energy
Chapter 8 Comparison of XPS and AES with Other Analytical Techniques
Glossary
Bibliography
Appendix 1 Auger Electron Energies
Appendix 2 Table of Binding Energies Accessible with Al K Radiation
Appendix 3 Documentary Standards in Surface Analysis
Index
EULA

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