Nanodevices for Integrated Circuit Design

Name: Nanodevices for Integrated Circuit Design
Brand: Wiley
Price: 168.99 EUR
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Suman Lata Tripathi Abhishek Kumar K. Srinivasa Rao Prasantha R. Mudimela(Herausgeber*in)

Wiley (Verlag)

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Erschienen am 16. Oktober 2023

304 Seiten

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Inhalt

Cover
Title Page
Copyright Page
Contents
List of Contributors
Preface
Acknowledgements
Chapter 1 Growth of Nano-Wire Field Effect Transistor in 21st Century
1.1 Introduction
1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET)
1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET)
1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET)
1.3 Application of Nanowire Field-Effect-Transistors (NW-FET)
1.4 Conclusion
References
Chapter 2 Impact of Silicon Nanowire-Based Transistor in IC Design Perspective
2.1 Introduction
2.2 Nanoscale Devices
2.2.1 Carbon Nanostructures
2.2.2 Nanoelectromechanical Systems
2.2.3 Graphene-Based Transistors
2.2.4 Silicon Nanowire Based Devices
2.3 Nanowire Heterostructures and Silicon Nanowires
2.3.1 Characteristics of SiNWs
2.3.2 Fabrication
2.3.3 Applications of SiNWs
2.4 Performance Analysis of Si Nanowire with SOI FET
2.5 Conclusion
References
Chapter 3 Kink Effect in Field Effect Transistors: Different Models and Techniques
3.1 Introduction
3.2 Techniques of Kink Effect
3.2.1 Current-Voltage Technique
3.2.2 Pulsed I-V Technique
3.2.3 Capacitance-Voltage Technique
3.3 Different Models of Kink Effect
3.4 Kink Effect in MOS Capacitors
3.4.1 Incomplete Ionization Model
3.4.2 Simulation of the Kink Effect in MOS Capacitor
3.4.2.1 Effect of the Variation of Activation Energy
3.4.2.2 Effect of the Variation of Traps Density
3.4.2.3 Effect of the Variation of Capture Cross Section
3.4.3 Comparison Between Experimental and Simulation Results
3.4.3.1 Hysteresis Effect on the C-V Characteristics
3.4.3.2 Proof of the Origin of Kink Effect
3.5 Conclusion
References
Chapter 4 Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications
4.1 Introduction of Two-Dimensional Materials
4.2 Evaluation of 2D-Materials
4.3 Overview of MoS2
4.3.1 Why MoS2
4.3.2 MoS2 Structured Design
4.4 Properties of MoS2
4.4.1 Bulk Characteristics
4.4.2 Electrical and Optical Characteristics
4.4.2.1 BandGap
4.4.2.2 Photoluminescence Spectra
4.4.2.3 Injection of Electrons
4.4.2.4 Transistor
4.4.3 Mechanical Properties
4.4.3.1 Valleytronics
4.4.3.2 Optical Transitions
4.4.3.3 Spin-Orbit Valence Band
4.5 Fabrication of MoS2
4.5.1 Mechanical Exfoliation
4.5.2 Intercalation
4.5.3 Solvent Exfoliation
4.5.4 Chemical Vapor Deposition (CVD)
4.6 Applications of MoS2
4.6.1 Solid Lubricants
4.6.2 Electronic Applications
4.6.3 Field-Effect Transistor
4.6.4 Switching Transistor
4.6.5 Nano-Structures
4.6.6 Biosensors
4.6.7 FET-Based Biosensors
4.7 Comparison of Other 2D Materials with MoS2
4.8 Conclusion
References
Chapter 5 Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction
5.1 Introduction
5.2 Device Structure
5.3 Results and Discussion
5.4 Conclusion
References
Chapter 6 Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications
6.1 Introduction
6.2 Structure of GAA-JLFET
6.3 Results and Discussion
6.3.1 DC Analysis
6.3.2 RF Analysis
6.3.3 Linearity Analysis
6.3.4 Noise Analysis
6.3.4.1 Thermal Noise
6.3.4.2 Flicker Noise
6.3.4.3 Gate-Induced Thermal Noise
6.4 Applications
6.5 Conclusion
References
Chapter 7 E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications
7.1 Silicon Era and Scaling Limit
7.2 III-V GaN-Based Compound Semiconductors
7.3 Band-Gap Engineering
7.4 Quantum Well
7.5 Polarization in GaN Devices and their Specific Properties
7.6 Strain and Lattice Mismatch in III-N Semiconductors
7.7 High Electron Mobility Transistors (HEMTs)
7.8 Two-Dimensional Electron Gas (2DEG)
7.9 AlGaN/GaN Heterostructure HEMT
7.9.1 Scope of the III-V Heterostructure Quantum Well Device
7.9.2 Problem Statement
7.9.3 Motivation for the Present III-V Heterostructure Quantum Well Device
7.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer
7.10.1 Device Architecture
7.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices
7.11.1 Device Architecture
7.11.2 Boost Converter Circuit Application
7.12 Conclusion
References
Chapter 8 Design of FinFET as Biosensor
8.1 Introduction
8.2 Existing FET Based Biosensors
8.2.1 TGRC-MOSFET as a Biosensor
8.2.2 An N-Type Nanogap Embedded Polarity Biased Based DM- EDTFET Biosensor
8.2.3 Cavity on Source Charge Plasma TFET-Based Biosensor
8.2.4 Dielectric Modulated Double Gate Junctionless MOSFET Biosensor
8.2.5 A Double Gate Dielectric Modulated Junctionless Tunnel Field-Effect Transistor as a Biosensor
8.3 Performance Parameters of Biosensors
8.4 FinFET Designed as Biosensor Using Visual TCAD
8.5 Biosensors in Disease Detection
8.6 Conclusion
8.7 Acknowledgement
References
Chapter 9 Biodegradable and Flexible Electronics: Types and Applications
9.1 Introduction
9.2 Biodegradable and Flexible Electronics
9.3 Types of Materials Used for Biodegradable and Flexible Electronics
9.3.1 Materials for Biodegradable Electronics
9.3.2 Materials for Flexible Electronics
9.4 Applications of Biodegradable and Flexible Electronic Devices
9.4.1 Sensing and Diagnosis
9.4.2 Energy Storage
9.4.3 Smart Textiles
9.4.3.1 Chameleonic Textiles
9.4.3.2 Intelligent Textile Sutures
9.4.3.3 Textile-Based Flexible and Printable Material
9.4.4 Wearable Electronics
9.5 Conclusion
References
Chapter 10 Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit
10.1 Introduction
10.2 Review of the Technology and Physics of Power PIN Diodes
10.2.1 Technological Aspect
10.2.2 Physical Aspect
10.3 State of the Art of PIN Diode Parameters Extraction
10.4 Proposed Method
10.4.1 Principle
10.4.2 Doping Profile Parameters Identification
10.4.2.1 Experimental Method
10.4.2.2 Model Description
10.4.2.3 Parameters Extraction Procedure
10.4.3 Ambipolar Lifetime Estimation
10.4.3.1 Experimental Method
10.4.3.2 Numerical Analysis of OCVD Method
10.4.3.3 Parameters Extraction Procedure
10.5 Validation
10.6 Conclusion
References
Chapter 11 Edge AI - A Promising Technology
11.1 Introduction
11.2 Deep Neural Networks
11.2.1 Multi-Layer Perceptrons (MLP)
11.2.2 Convolutional Neural Networks (CNNs)
11.2.3 Recurrent Neural Networks (RNNs)
11.3 Model Compression Techniques for Deep Learning
11.3.1 Pruning
11.3.2 Quantization
11.3.3 Low Rank Factorization
11.3.4 Knowledge Distillation
11.4 Computing Infrastructures
11.4.1 GPU Accelerator
11.4.2 FPGA Accelerator
11.5 Conclusion
References
Chapter 12 Tunable Frequency Oscillator
12.1 Introduction
12.2 Experimental Methods and Materials
12.2.1 Varactor Diode
12.2.2 Active Inductor
12.3 Results and Discussion
12.4 Conclusion
References
Chapter 13 Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications
13.1 Introduction - An Explanation of the Process and Approach
13.2 Nanomaterials
13.2.1 Surface to Volume Ratio
13.2.2 Quantum Confinement Effect
13.3 Synthesis and Characterization of Nano Materials
13.4 Characterization Technique for Structural Analysis
13.5 Magnetic Materials
13.6 Classification of Magnetic Materials
13.7 Magnetic Properties
13.8 Ferrites
13.8.1 Classification and Types of Ferrites
13.8.2 Spinel Ferrite
13.8.3 Garnet
13.8.4 Ortho Ferrite Structure
13.8.5 Magnetoplumbite Structure
13.8.6 Hexagonal Ferrites
13.8.7 Classification of Hexaferrite
13.9 Applications of Magnetic Materials
13.10 Conclusion
References
About the Editors
Index
EULA

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