The present textbook treats the effects of temperature upon weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder upon more complex systems such as GaAs and Al2Gal-xAs alloy. The effects of disorder-induced band tailing upon deep levels in compound semiconductor alloys are also studied.
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Sprache
Verlagsort
Zielgruppe
Für höhere Schule und Studium
Für Beruf und Forschung
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Illustrations, unspecified
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ISBN-13
978-3-0357-0664-2 (9783035706642)
DOI
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Schweitzer Klassifikation
Preface
Band Tailings and Deep Defects in Semiconductors: Introduction
Band Tailings and Deep Defects in Semiconductors: Theory and Formalism
Band Tailings and Deep Defects in Semiconductors: Self-Consistent Theory
Band Tailings and Deep Defects in Semiconductors: Electron-Phonon Interaction
Band Tailings and Deep Defects in Semiconductors: Application to ?-Si:H and ?-Ge:H
Band Tailings and Deep Defects in Semiconductors: Weak Disorder in III-V Compounds and Alloys
Band Tailings and Deep Defects in Semiconductors: Conclusions
Band Tailings and Deep Defects in Semiconductors: List of References
Band Tailings and Deep Defects in Semiconductors: Appendix A: General Derivation of Initial State Decay
