Magnetic Memory Technology

Name: Magnetic Memory Technology | Spin-transfer-Torque MRAM and Beyond
Brand: Wiley-Blackwell
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Spin-transfer-Torque MRAM and Beyond

Denny D. Tang Chi-Feng Pai(Autor*in)

Wiley-Blackwell (Verlag)

1. Auflage

Erschienen am 12. Dezember 2020

352 Seiten

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Beschreibung

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE

Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications.

This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization.

Among other topics, readers will benefit from the book's discussions of:

* An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts

* An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization

* A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model

* Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect

* Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others

Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

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Inhalt

Preface xi

Author Biographies xiv

List of Cited Tables and Figures xvi

1 Basic Electromagnetism 1

1.1 Introduction 1

1.2 Magnetic Force, Pole, Field, and Dipole 1

1.3 Magnetic Dipole Moment, Torque, and Energy 3

1.4 Magnetic Flux and Magnetic Induction 5

1.5 Ampère's Circuital Law, Biot-Savart Law, and Magnetic Field from Magnetic Material 6

1.6 Equations, cgs-SI Unit Conversion Tables 11

2 Magnetism and Magnetic Materials 19

2.1 Introduction 19

2.2 Origin of Magnetization 19

2.3 Classification of Magnetisms 28

2.4 Exchange Interactions 42

2.5 Magnetization in Magnetic Metals and Oxides 49

2.6 Phenomenology of Magnetic Anisotropy 51

2.7 Origins of Magnetic Anisotropy 54

2.8 Magnetic Domain and Domain Walls 57

3 Magnetic Thin Films 67

3.1 Introduction 67

3.2 Magnetic Thin Film Growth 67

3.3 Magnetic Thin Film Characterization 72

4 Magnetoresistance Effects 77

4.1 Introduction 77

4.2 Anisotropic Magnetoresistance (AMR) 78

4.3 Giant Magnetoresistance (GMR) 79

4.4 Tunneling Magnetoresistance (TMR) 81

4.5 Contemporary MTJ Designs and Characterization 84

5 Magnetization Switching and Field MRAMs 93

5.1 Introduction 93

5.2 Magnetization Reversible Rotation and Irreversible Switching Under External Field 93

5.3 Field MRAMs 99

6 Spin Current and Spin Dynamics 105

6.1 Introduction to Hall Effects 105

6.2 Spin Current 109

6.3 Spin Dynamics 116

6.4 Interaction Between Polarized Conduction Electrons and Local Magnetization 124

6.5 Spin Current Interaction with Domain Wall 134

7 Spin-Torque-Transfer (STT) MRAM Engineering 151

7.1 Introduction 151

7.2 Thermal Stability Energy and Switching Energy 152

7.3 STT Switching Properties 154

7.4 The Integrity of MTJ Tunnel Barrier 166

7.5 Data Retention 169

7.6 The Cell Design Considerations and Scaling 173

7.7 MTJ SPICE Models 188

7.8 Test Chip, Test, and Chip-Level Weak Bit Screening 191

8 Advanced Switching MRAM Modes 205

8.1 Introduction 205

8.2 Current-Induced-Domain-Wall Motion (CIDM) Memory 206

8.3 Spin-Orbit Torque (SOT) Memory 211

8.4 Magneto-Electric Effect and Voltage-Control Magnetic Anisotropy (VCMA) MRAM 224

8.5 Relative Merit of Advanced Switching Mode MRAMs 231

9 MRAM Applications and Production 241

9.1 Introduction 241

9.2 Intrinsic Characteristics and Product Attributes of Emerging Nonvolatile Memories 242

9.3 Memory Landscape and MRAM Opportunity 247

9.4 MRAM Production 266

Appendix A Retention Bake (Including Two-Way Flip) 277

Appendix B Memory Functionality-Based Scaling 279

Appendix C High-Bandwidth Design Considerations for STT-MRAM 299

Index 323

List of Cited Tables and Figures

Chapter 2

Table/Figure Number Source Figure 2.8 J. M. D. Coey, Magnetism and Magnetic Materials (Cambridge University Press, Cambridge, UK, 2010). Figure 2.10 S. Blundell, Magnetism in condensed matter (Oxford University Press, Oxford; New York, 2001), Oxford master series in condensed matter physics. Figure 2.13 C. M. Hurd, Varieties of Magnetic Order in Solids, Contemp Phys 23, 469 (1982) Figure 2.15 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000) Figure 2.17 S. S. P. Parkin and D. Mauri, Spin engineering: Direct determination of the Ruderman-Kittel-Kasuya-Yosida far-field range function in ruthenium, Phys. Rev. B 44, 7131 (1991) Figure 2.18 A. Fert, V. Cros, and J. Sampaio, Skyrmions on the track, Nat. Nanotechnol. 8, 152 (2013). Figure 2.19 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000) Figure 2.20 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000) Figure 2.22 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000) Figure 2.23 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000) Figure 2.27 T. Liu, J. W. Cai, and L. Sun, Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer, AIP Adv. 2, 032151 (2012) Figure 2.30 R. C. O'Handley, Modern Magnetic Materials: Principles and Applications (Wiley, New York, 2000)

Chapter 3

Table/Figure Number Source Figure 3.2.4 Applied Materials Inc. www.appliedmaterials.com/products/MRAM.

Chapter 4

Table/Figure Number Source Figure 4.2.1 W. Gil, D. Görlitz, M. Horisberger, and J. Kötzler, Magnetoresistance anisotropy of polycrystalline cobalt films: Geometrical-size and domain effects, Phys. Rev. B 72, 134401 (2005). Figure 4.3.2 1. M. N. Baibich, J. M. Broto, A. Fert, F. N. Vandau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, Giant Magnetoresistance of (001)Fe/(001) Cr Magnetic Superlattices, Phys. Rev. Lett. 61, 2472 (1988).2. G. Binasch, P. Grunberg, F. Saurenbach, and W. Zinn, Enhanced Magnetoresistance in Layered Magnetic-Structures with Antiferromagnetic Interlayer Exchange, Phys. Rev. B 39, 4828 (1989). Figure 4.4.1 S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Spintronics: A spin-based electronics vision for the future, Science 294, 1488 (2001) Figure 4.4.2 1. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions, Phys. Rev. Lett. 74, 3273 (1995).2. T. Miyazaki and N. Tezuka, Giant magnetic tunneling effect in Fe/Al2O3/Fe junction, Journal of Magnetism and Magnetic Materials 139, L231 (1995). Figure 4.4.3 1. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions, Nat. Mater. 3, 868 (2004).2. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. H. Yang, Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers, Nat. Mater. 3, 862 (2004). Figure 4.5.2 S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction, Nat. Mater. 9, 721 (2010). Figure 4.5.3 S. Ikeda, H. Sato, H. Honjo, E. C. I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, and H. Ohno, in 2014 IEEE International Electron Devices Meeting2014), pp. 33.2.1. Figure 4.5.6 D. C. Worledge and P. L. Trouilloud, Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling, Appl. Phys. Lett. 83, 84 (2003).

Chapter 6

Table/Figure Number Source Figure 6.3 Based on Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, "Observation of the spin Hall effect in semiconductors", Science Express 1105514 (2004) Figure 6.5 M.I. Dyakonov, Spin Hall Effects,International Journal of Modern Physics B, 23(12n13), 2556-2565. ©2009, World Scientific Publishing Company Figure 6.7 Feng et. al. Prospects of spintronics based on 2D materials. WIREs Comput Mol Sci, 7: e1313. © 2017 John Wiley & Sons Figure 6.8 Based on T. Kimura, J. Hamrle, and Y. Otani, "Spin-dependent boundary resistance in the lateral spin-valve structure", Appl. Physics Lett. VOLUME 85, NUMBER 16 18 OCTOBER (2004) Figure 6.9 Based on S. O. Valenzuela and M. Tinkham, "Spin-polarized tunneling in room-temperature mesoscopic spin valves", APPLIED PHYSICS LETTERS VOLUME 85, NUMBER 24 13 DECEMBER 2004 Figure 6.14 H. Lee, L. Wen, M. Pathak, P. Janssen, P. LeClair, C. Alexander and T. Mewes, "Spin pumping in Co56Fe24B20 multilayer systems", Journal of Physics D: Applied Physics, Volume 41, Number 21. © 2008 IOP Publishing Figure 6.15 Bret Heinrich, Yaroslav Tserkovnyak, GeorgWoltersdorf, Arne Brataas, Radovan Urban, and Gerrit E.W. Bauer "Dynamic Exchange Coupling in Magnetic Bilayers", Physical review Lett. 90, NUMBER 18. 187601. © 2003 American Physical Society Figure 6.21 Modified from Chen Wang, Yong-Tao Cui, Jordan A. Katine, Robert A. Buhrman and Daniel C. Ralph1, "Time-resolved measurement of spin-transfer-driven ferromagnetic resonance and spin torque in magnetic tunnel junctions", NATURE PHYSICS, VOL 7, p.496, JUNE 2011 Figure 6.23 Based on S. Maekawa, editor. Concepts in spin electronics, Oxford: Oxford University Press current in very thin metallic films," J. Appl. Phys. 55, 1954 (1984)

Chapter 7

Table/Figure Number Source Figure 7.3 From W. H. Butler, Tim Mewes, Claudia K. A. Mewes, P. B. Visscher, William H. Rippard, Stephen E. Russek, and Ranko Heindl, "Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation," IEEE Trans. On Magentics, VOL. 48, NO. 12, p.4684, DECEMBER 2012. © 2012 IEEE. Figure 7.4 From W. H. Butler, Tim Mewes, Claudia K. A. Mewes, P. B. Visscher, William H. Rippard, Stephen E. Russek, and Ranko Heindl, "Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation," IEEE Trans. On Magentics, VOL. 48, NO. 12, p.4684, DECEMBER 2012. © 2012 IEEE. Figure 7.6 From Guenole Jan, et.al, "Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms", Symposium on VLSI Technology Digest of Technical Papers, (2016). © 2016 IEEE. Figure 7.10 From W. H. Butler, Tim Mewes, Claudia K. A. Mewes, P. B. Visscher, William H. Rippard, Stephen E. Russek, and Ranko Heindl, "Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation," IEEE Trans. On Magentics, VOL. 48, NO. 12, p.4684, DECEMBER 2012. © 2012 IEEE. Figure 7.11 From Y. Higo, K. Yamane, K. Ohba, H. Narisawa, K. Bessho, M. Hosomi, and H. Kano, "Thermal activation effect on spin transfer switching in magnetic tunnel junctions", APPLIED PHYSICS LETTERS 87, 082502 2005. © 2005 AIP Publishing. Figure 7.12 From Sun, J. Z. et al. High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions. J. Appl. Phys. 105, 07D109 (2009). © 2009 AIP...

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