Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications

AcknowledgmentsEditors PrefaceChapter 1 Introduction ReferencesChapter 2 The Chalcopyrite Structure and Crystal Growth 2.1 The Chalcopyrite Structure 2.2 Phase Transitions in Chalcopyrite Crystals 2.3 Tetrahedrally Coordinated Compounds with More Than Three Components 2.4 Dissociation Pressures of Chalcopyrite Compounds 2.5 Phase Relationships in I-III-VI Systems 2.5.1 The Cu2Se-Ga2Se3 System 2.5.2 The Ag2Se-Ga2Se3 System 2.5.3 The Ag2Se-In2Se3 System 2.5.4 The Cu2Te-Ga2Te3 System 2.5.5 The Ag2Te-Ga2Te3 System 2.6 Phase Relationships in Mixed I-III-VI2 Systems 2.7 Phase Relationships in (I-III-VI22)-(II-VI) and (I-III-VI2)-(III-V) Systems 2.8 Phase Relationships in II-IV-V Systems 2.8.1 The Zn-Ge-P System 2.8.2 The Zn-Ge-As System 2.8.3 The Zn-Sn-As System 2.8.4 The Zn-Sn-Sb System 2.8.5 The Cd-Ge-P System 2.8.6 The Cd-Ge-As System 2.8.7 The Cd-Sn-P System 2.8.8 The Cd-Sn-As and Zn-Si-As Systems 2.9 Phase Relationships in Mixed II-IV-V Systems 2.10 Phase Relationships in Mixed (II-IV-V2)-(III-V) Systems 2.11 Crystal Growth, General Considerations 2.11.1. Growth of I-III-VI2 Crystals 2.11.2 Growth of Single Crystals of II-IV-V2 Compounds 2.11.3 Growth of Epitaxial Layers 2.12 Glass Formation in Chalcopyrite Systems 2.13 Effect of High Pressure and Temperature on Ternary Compounds 2.14 Mechanical Behavior of Chalcopyrite Compounds ReferencesChapter 3 Electronic Structure of II-IV-V2 Compound 3.1 Theoretical Concepts 3.2 Lowest Direct Energy Gaps 3.2.1 Experimental Results 3.2.2 Quasicubic Model 3.2.3 Band Structure Near k = 0 3.3 Pseudodirect Energy Gaps 3.4 Optical Anisotropy of II-IV-V2 Compounds 3.4.1 CdSnP2 3.4.2 CdGeP2 3.5 Higher Lying Energy Gaps ReferencesChapter 4 Electronic Structure of I-III-VI2 Semiconductors 4.1 Introduction 4.2 Experimental Results 4.2.1 Valence Band Structure 4.2.2 Temperature Dependence of the Direct Energy Gap 4.3 p-d Hybridization 4.4 Exciton Optical Properties ReferencesChapter 5 Luminescence 5.1 Luminescence Spectra of II-IV-V2 Compounds 5.1.1 CdSnP2 5.1.2 CdSiAs2 5.1.3 ZnSiP2 5.1.4 Other II-IV-V2 Crystals 5.2 Luminescence Spectra of I-III-VI2 Compounds 5.2.1 AgInSe2 and CuInSe2 5.2.2 CuInS2 and CuGaS2 5.2.3 CuGaS2: I 5.2.4 AgGaS2 and AgGaSe2 5.3 Stimulated Emission Spectra of I-III-VI2 Compounds 5.4 CdSnP2-InP Heterodiodes 5.5 CdS-CuGaS2 Electroluminescent Diodes ReferencesChapter 6 Nonlinear Optical Applications 6.1 Nonlinear Optical Phenomena 6.1.1 General Principles 6.1.2 Phase Matching in 42m Crystals 6.1.3 Physical Origin of Optical Properties 6.2 The Optical Parametric Oscillator 6.3 Phase-Matched Upconversion of 10.6 µ Radiation 6.4 Difference Frequency Generation of Submillimeter Waves ReferencesChapter 7 Electrical Properties 7.1 Electrical Properties of II-IV-V2 Compounds 7.1.1 CdSnAs2 7.1.2 CdGeAs2 7.1.3 ZnSiAs2 and ZnGeP2 7.1.4 ZnSiP2 7.1.5 ZnSnP2 and ZnSnAs2 7.2 Band Parameters of II-IV-V2 Compounds 7.3 Electrical Properties of I-III-VI2 Compounds 7.3.1 Sulfides and Selenides-Annealing Characteristics 7.3.2 Sulfides and Selenides-Transport Measurements 7.3.3 Tellurides-Transport Measurements 7.3.4 Other Ternary Compounds 7.4 Glassy II-IV-V2 Compounds 7.4.1 CdGeAs2, CdGeP2, and CdSiAs2 7.4.2 Memory and Switching Devices 7.4.3 Thin-Film Devices 7.5 Current Oscillations 7.6 Thermoelectric Properties ReferencesChapter 8 Miscellaneous Physical Properties 8.