Nitride Semiconductors

1. High Pressure Crystallization of GaN (I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski)

2. Epitaxial Lateral Overgrowth of GaN (P. Gibart, B. Beaumont, and P. Vennéguès)

3. Plasma Assisted Molecular Beam Epitaxy of III-V Nitrides (A. Georgakilas, H. M. Ng, and Ph. Komninou)

4. The Growth of Gallium Nitride by Hydride Vapour Phase Epitaxy (HVPE) (A. Trassoudaine, R. Cadoret and E. Aujol)

5. Growth and Properties of InN (V. Yu. Davydov, A. A. Klochikhin, S. V. Ivanov, I. Aderhold, and A. Yamamoto)

6. Ab initio Analysis of Surface Structures and Adatom Kinetics of Group-III Nitrides (J. Neugebauer)

7. Topological Analysis of Defects in Nitride Semiconductors (G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and R. C. Pond)

8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation and Interaction Mechanisms (P. Ruterana, A. M. Sánchez, and G. Nouet)

9. Stain, Chemical Composition and Defects Analysis at Atomical Level in GaN Based Epitaxial Layers (S. Kret, P. Ruterana, C. Delamarre, T. Benabbas, and P. Dluzewski)

10. Ohmic Contacts to GaN (P. J. Hartlieb, R. J. Nemanich, and R.F. Davis)

11. Electroluminescent Diodes and Laser Diodes (H. Amano)

12. GaN-based Modulation Doped FETs and Heterojunction Bipolar Transistors ( H. Morkoç, L. Liu)

13. GaN Based UV Photodetectors (Franck Omnes, Eva Monroy)