Preface
Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
The Role of Defects on SiC Device Performance and Ways to Mitigate them
Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC (TM) Engineered Substrates
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy
Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
Macro Step Bunching/Debunching Engineering on 4 degrees off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing (R)
Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
