Gettering and Defect Engineering in Semiconductor Technology XV

<ul><li>Preface, Committees, Invited Speakers and Sponsor</li><li>I. Defect Engineering in Silicon Solar Cells</li><li>Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination</li><li>Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions</li><li>External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells</li><li>Precipitation of Interstitial Iron in Multicrystalline Silicon</li><li>Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar Cells</li><li>On the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness</li><li>II. Structural and Production Issues in Cast Silicon Materials for Solar Cells</li><li>Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells</li><li>Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers</li><li>The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline Silicon</li><li>Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si</li><li>Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon</li><li>10 cm Diameter Mono Cast Si Growth and its Characterization</li><li>Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method</li><li>III. Characterisation of Silicon for Solar Cells</li><li>Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon</li><li>Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells</li><li>Photoluminescence Imaging of Silicon Bricks</li><li>Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces</li><li>Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB</li><li>A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization</li><li>IV. Intrinsic Point Defects in Silicon</li><li>Properties of Point Defects in Silicon: New Results after a Long-Time Debate</li><li>Fast and Slow Vacancies in Silicon</li><li>Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals</li><li>V. Light Impurities in Silicon-Based Materials</li><li>First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals</li><li>The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon</li><li>Monoisotopic ²⁸Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors</li><li>Light-Element Impurities and their Reactions in Multicrystalline Si</li><li>Isotope-Dependent Phonon Trapping at Defects in Semiconductors</li><li>Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon</li><li>Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study</li><li>PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si</li><li>Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case</li><li>Calibration of IR Absorbance in Highly Nitrogen Doped Silicon</li><li>Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres</li><li>VI. Metals in Silicon: Fundamental Properties and Gettering</li><li>New Results on the Electrical Activity of <i>3d</i>-Transition Metal Impurities in Silicon</li><li>Metastable Cu<i>V</i>O* Complex in Silicon</li><li>Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon</li><li>Association of FeB Pairs under Illumination</li><li>Proximity Gettering of Slow Diffuser Contaminants</li><li>Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers</li><li>Polycrystalline Silicon Gettering Layers with Controlled Residual Stress</li><li>VII. Extended and Implantation-Related Defects in Silicon</li><li>Charge Carrier Transport along Grain Boundaries in Silicon</li><li>Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States</li><li>Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon</li><li>Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study</li><li>Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in <i>n</i>-FZ-Si:P Crystals</li><li>Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si</li><li>VIII. Surfaces, Passivation and Processing</li><li>Effect of Hydrogen for Preservation of Reconstructed Surfaces</li><li>Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers</li><li>Electric Field Effect Surface Passivation for Silicon Solar Cells</li><li>Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO₂ System</li><li>Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses</li><li>Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber</li><li>Anisotropy of the Porous Layer Formation Rate in Silicon with Various Acceptor Concentrations</li><li>Queue Time Sensitivity Analysis Methodology</li><li>IX. Germanium-Based Devices and Materials</li><li>Luminescence from Germanium and Germanium on Silicon</li><li>High n-Type Doping in Ge for Optical Gain and Lasing</li><li>Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate</li><li>Study of Photovoltage Decays in Nanostructured Ge/Si</li><li>Vacancy-Related Defects in Ge Doped with Tin</li><li>First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals</li><li>Production and Annealing of Defects in Proton-Irradiated n-Ge</li><li>X. Semiconductors other than Silicon and Germanium</li><li>Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs</li><li>Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam</li><li>Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study</li><li>Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors</li><li>Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics</li><li>Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence</li><li>XI. Nanostructures and New Materials Systems</li><li>Synthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics Applications</li><li>Homo- and Hetero-Structure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cones Formation</li><li>Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC</li><li>Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix</li><li>Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures</li><li>Defects Related to Sb-Mediated Ge Quantum Dots</li><li>ZnO Nanoparticle Formation in Si by Co-Implantation of Zn⁺ and O⁺Ions</li></ul>