Silicon Carbide and Related Materials 2021

<ul><li>Preface</li><li>Chapter 1: Material Growth and Wafer Manufacturing</li><li>Models for Impurity Incorporation during Vapor-Phase Epitaxy</li><li>Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration</li><li>Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth</li><li>High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer</li><li>3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations</li><li>A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality</li><li>The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates</li><li>Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer</li><li>Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers</li><li>Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices</li><li>Advances in 200 mm 4H SiC Wafer Development and Production</li><li>Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates</li><li>Effect of N and Al Doping on 3C-SiC Stacking Faults</li><li>Impact of N Doping on 3C-SiC Defects</li><li>Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding</li><li>
<i>In Situ</i> Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry</li><li>Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride</li><li>Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide</li><li>Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues</li><li>Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy</li><li>Review of Sublimation Growth of SiC Bulk Crystals</li><li>Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers</li><li>Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200 degreesC for Photonic Applications</li><li>SiC Mass Commercialization: Present Status and Barriers to Overcome</li><li>150 mm SiC Engineered Substrates for High-Voltage Power Devices</li><li>Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition</li><li>Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material</li><li>Opening through 200 mm Silicon Carbide Epitaxy</li><li>Chapter 2: Processing</li><li>Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing</li><li>Charge Trapping Mechanisms in Nitridated SiO₂/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry</li><li>Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers</li><li>Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC</li><li>Polish Scratch Simulation vs. Polish Tool Type</li><li>Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics</li><li>Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC</li><li>Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P₂O₅ Surface Passivation Treatment</li><li>The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation</li><li>Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing</li><li>A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion</li><li>Multiscale Simulations of Plasma Etching in Silicon Carbide Structures</li><li>Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC</li><li>Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation</li><li>Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing</li><li>Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap</li><li>Estimation of Activation and Compensation Ratios in Al⁺ Ion Implanted 4H-SiC: Comparison of Two Methodologies</li><li>Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing</li><li>Chapter 3: Characterization, Modelling and Defect Engineering</li><li>Identification of High Resolution Transient Thermal Network Model for Power Module Packages</li><li>Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends</li><li>Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology</li><li>Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method</li><li>Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation</li><li>Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection</li><li>Automatic Image Analysis of Stackingfault</li><li>Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures</li><li>Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis</li><li>Microscopic Evaluation of Al₂O₃/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy</li><li>Measurement of Dislocation Density in SiC Wafers Using Production XRT</li><li>Computational Study of the Silicon Vacancy in 3C-SiC and Perspectives for Quantum Technologies</li><li>Depth-Resolved Study of the SiO₂- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy</li><li>Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator</li><li>The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO₂</li><li>KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices</li><li>Surface Potential Fluctuations of SiO₂/SiC Interfaces Investigated by Local Capacitance-Voltage Profiling Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy</li><li>4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method</li><li>Sensitivity of D_it Extraction at the SiO₂/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements</li><li>Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials</li><li>Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography</li><li>Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms</li><li>Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers</li><li>Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC</li><li>Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide</li><li>Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs</li><li>Fast Defect Mapping at the SiO₂/ SiC Interface Using Confocal Photoluminescence</li><li>Evaluation of Line-Shape Defect in Epitaxial Wafer</li><li>Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-Si? on Silicon</li><li>A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability</li><li>Ni/Heavily-Doped 4H-SiC Schottky Contacts</li><li>Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing</li><li>Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants</li><li>Structural, Electronic and Optical Properties of 6H-SiC and 3C-SiC with the Application in Solar Cell Devices</li><li>Chapter 4: Power Devices and Applications</li><li>Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low V_F</li><li>Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation</li><li>Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs</li><li>Self-Turn-On Phenomenon of SiC MOSFETs by Fast Switching Operation</li><li>Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications</li><li>Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout</li><li>Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO₂/6H-SiC MOS Capacitors at 700 K</li><li>Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration</li><li>Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes</li><li>AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications</li><li>Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules</li><li>Investigation of SiC Thyristors with Varying Amplifying Gate Design</li><li>Gate Oxide Reliability and V_TH Stability of Planar SiC MOS Technology</li><li>Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design</li><li>Neutron Detection Study through Simulations with Fluka</li><li>A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation</li><li>DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500 degreesC</li><li>A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium</li><li>Multi-Layer High-K Gate Stack Materials for Low D_it 4H-SiC Based MOSFETs</li><li>Electrothermal Modelling and Measurements of Parallel-Connected V_THMismatched SiC MOSFETs under Inductive Load Switching</li><li>Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology</li><li>Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET</li><li>SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth</li><li>Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations</li><li>Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices</li><li>Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs</li><li>Edge Terminations for 4H-SiC Power Devices: A Critical Issue</li><li>Impact of Device Design Parameters on 15 kV SiC MOSFETs</li><li>Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application</li><li>Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes</li><li>A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers</li><li>Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs</li><li>Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate</li><li>Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures</li><li>Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs</li><li>Thermal Simulations of a New SiC Detector Design for Neutron Measurements in JSI Nuclear Research Reactor</li><li>Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts</li><li>On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts</li><li>Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field</li><li>Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs</li><li>Temperature Dependence of On-State Inter-Terminal Capacitances (C_gd and C_gs) of SiC MOSFETs and Frequency Limitations of their Measurements</li><li>SiC MOSFET C-V Characteristics with Positive Biased Drain</li><li>A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs</li><li>SiC MOSFET C-V Curves Analysis with Floating Drain Configuration</li><li>Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs</li><li>Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress</li><li>Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment</li><li>Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models</li></ul>