Ultra Clean Processing of Semiconductor Surfaces XV

<ul><li>Preface</li><li>Chapter 1: Contamination and Contamination Control</li><li>Surface Cleaning Challenges for Organic Light Emitting Diodes</li><li>Characterization and Removal of Metallic Contamination in H₂O and H₂O₂ Using Single Particle Inductively Coupled Plasma Mass Spectrometry</li><li>Direct Analysis of Ultra Trace Metallic Particles in NH₃ and HCl Gases by Gas Exchange Device (GED)-ICP-MS</li><li>Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol</li><li>Cl-Containing Microplastics from the Environment</li><li>Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines</li><li>Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow</li><li>Chapter 2: FEOL: Surface Chemistry and Etching of Group IV Semiconductors</li><li>Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe</li><li>Wet Chemical Cleaning of Organosilane Monolayers</li><li>Reaction Kinetics of Poly-Si Etching in TMAH Solution</li><li>Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H₂O₂ Solutions</li><li>Si_1-XGe_X Selective Etchant for Gate-All-Around Transistors</li><li>Chapter 3: FEOL: Surface Chemistry and Etching of III-V Compound Semiconductors</li><li>GaN MOS Structures with Low Interface Trap Density</li><li>Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water</li><li>Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions</li><li>Characterization of Wet Chemical Atomic Layer Etching of InGaAs</li><li>Chapter 4: FEOL: Etch Dielectric Films and Removal of Masking Films</li><li>Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning</li><li>Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid</li><li>Kinetic Study on the Si₃N₄ Etching in Superheated Water</li><li>Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling</li><li>Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas</li><li>High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System</li><li>Chapter 5: Wet Processing in Narrow Spaces and Pattern Collapse</li><li>Polydimethylsiloxane Micro-Channels Application for the Study of Dynamic Wetting of Nano-Etched Silicon Surfaces Based on Acoustic Characterization Method</li><li>Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR</li><li>Effect of Hydrophobicity and Surface Potential of Silicon on SiO₂ Etching in Nanometer-Sized Narrow Spaces</li><li>Formulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+) Mixtures for Cleaning High-Aspect Ratio Contacts in 3D NAND</li><li>New Test Structure Development for Pattern Collapse Evaluations</li><li>Breakthrough of Sublimation Drying by Liquid Phase Deposition</li><li>Chapter 6: Fundamentals of Megasonic Agitation</li><li>Estimation of the Generation Rate of H? Radicals in a Megasonic Field Using an Electrochemical Technique</li><li>Visualization of Acoustic Waves and Cavitation in Ultrasonic Water Flow</li><li>Simulation of Rayleigh Bubble Growth near a No-Slip Rigid Wall</li><li>Effect of Surfactant in Gas Dissolved Cleaning Solutions on Acoustic Bubble Dynamics</li><li>Interaction between Free-Surface Oscillation and Bubble Translation in a Megasonic Cleaning Bath</li><li>Chapter 7: Particle Removal</li><li>Study on Uniform Deposition on 300 mm Silicon Wafer with Sub-100 nm Sized Particles for Cleaning Application</li><li>Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O₃ and HF</li><li>Particle Removal in Ultrasonic Water Flow Cleaning Role of Cavitation Bubbles as Cleaning Agents</li><li>Scalable Particle Removal for sub-5 nm Nodes</li><li>The Effect of Thermal Aging on Nano-Particle Removal</li><li>Chapter 8: Post-CMP Cleaning</li><li>Contact Vs. Non-Contact Cleaning: Correlating Interfacial Reaction Mechanisms to Processing Methodologies for Enhanced FEOL/BEOL Post-CMP Cleaning</li><li>Effect of Viscosity on Ceria Abrasive Removal in the Buffing CMP Process</li><li>Nodule Deformation of PVA Roller Brushes on a Rotating Plate: Optimum Cleaning for Nanosized Particles due to Liquid Absorption and Desorption of Sponge Deformation</li><li>Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process</li><li>Tribological Characterization of Anionic Supramolecular Assemblies in Post-STI-CMP Cleaning Solution Using a Novel Post-CMP PVA Brush Scrubber</li><li>Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning</li><li>Chapter 9: BEOL Cleaning</li><li>Removal of Post Etch Residue on BEOL Low-K with Nanolift</li><li>Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers</li><li>Selective Nickel Platinum Removal without Titanium Nitride Metal Gate Corrosion</li><li>Roughness and Uniformity Control during Wet Etching of Molybdenum</li><li>Effect of Surface Chemistry on Ruthenium Wet Etching</li><li>Selective Ru or Co Etch for 3nm Applications</li><li>Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging</li></ul>