Silicon Carbide MOSFETs and Special Materials

<ul><li>Preface</li><li>Chapter 1: Preparation and Properties of Composite Materials</li><li>Wear Resistance of Bio-Polymer Composite Base on Cotton Post-Harvest Line Residues</li><li>Antibacterial Efficacy of Non-Copper Polymer Based Composite Enhanced with Metallic Particles Using Fused Deposition Modeling</li><li>Sintering and Characterization of Alumina Reinforced Tungsten Carbide Cobalt Composite</li><li>Conductive Filament Composites from Waste Battery Rod-Derived Exfoliated Graphite for Fused Deposition Modeling 3D Printing: A Two-Level Factorial Design Optimization Study</li><li>Chapter 2: Materials for Biomedical Applications</li><li>Sol-Gel Derived Bioactive Glasses as Synthetic Bone Substitutes</li><li>Characteristics of Bioceramic Hydroxyapatite Based on Sand Lobster Shells (<i>Panulirus homarus</i>) as Sources of Calcium with Optimal Calcination Temperature</li><li>Electrospinning of Ternary Aqueous Solutions of Polyvinyl Alcohol, Chitosan and Salicylic Acid</li><li>Chapter 3: Functional and Special Materials and Technologies</li><li>The Effect of Polymeric Surfactant on Adhesion and Uniformity of Ag-TiO₂ Coating on Air Filter with Self-Cleaning Capability</li><li>Effects of Dual Moderate-Temperature-Grown AIN Interlayers on Structural and Optical Properties of Semipolar (1122) AIN Film</li><li>Direct Ink Writing of Tubular Al₂O₃ Membrane Support Using Agar-Based Ink in 3D-Printing</li><li>Convective Structure of Nematic Liquid Crystal in Parallelepiped Transverse Cell</li><li>Effect of Ligand Concentration on the Stability and Copper (II) Sensing Performance of Humic Acid-Functionalized Silver Nanoparticles</li><li>Chapter 4: Properties and Production Technologies of Silicon Carbide Metal-Oxide Semiconductors</li><li>Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs</li><li>Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation</li><li>Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide</li><li>Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO₂/SiC Lateral MOSFETs</li><li>Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations</li><li>The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability</li><li>NO Annealing Simulation of 4H-SiC/SiO₂ by Charge-Transfer Type Molecular Dynamics</li><li>Improvement of Interface Properties for Thermally Oxidized SiC/SiO₂ MOS Capacitor by Post Oxidation Annealing Treatment</li><li>High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition</li><li>Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC</li><li>Hypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate Stress</li><li>Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor</li><li>Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs</li><li>Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs</li><li>Physical Modelling of Charge Trapping Effects in SiC MOSFETs</li></ul>