Functional Materials and Materials Reliability

<ul><li>Preface</li><li>Chapter 1: Composite Materials and Structures</li><li>Control of the Deformation Mode of Aluminum Foam-Filled Tubes as a Function of Foam Porosity</li><li>Crashworthiness Analysis of Vehicle Crash-Box Filled with Aluminium Foam</li><li>Improving Fiber-Matrix Compatibility by Surface Modification of Coconut Coir Fiber Using White Rot Fungi</li><li>Ramie Fiber Woven Composite: The Effect of Feedrate Variation on the Tensile Strength of the Open Hole in the Drilling</li><li>Mathematical Model of Shear Stress Transfer at Fiber-Matrix Interface of Composite Material</li><li>Study on the Mechanical Properties and Behavior of Corrugated Cardboard under Tensile and Compression Loads</li><li>Chapter 2: Functional Materials</li><li>Modification of Polyester Properties through Functionalization with PVA</li><li>Cellulosic Textile Materials Functionalization with Formic Acid and Improvement of their Properties</li><li>First-Principles Insights into the Acetic Acid Sensing Capability of the C₃₉N Armchair Nanotube</li><li>Chapter 3: Reliability of Silicon Carbide Metal Oxide Semiconductor Devices</li><li>Bias-Induced Instability of 4H-SiC CMOS</li><li>On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs</li><li>Robustness of SiC MOSFETs under Repetitive High Current Pulses</li><li>Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress</li><li>Chip-Top Packaging Technology for SiC Devices Operational at 250 degreesC with Power-Cycling Durability of over 300,000 Cycles</li><li>Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures</li><li>AC-Stress Degradation in SiC MOSFETs</li><li>Power Cycling on Lateral GaN and ?-Ga₂O₃ Transistors</li><li>Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements</li><li>Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages</li><li>Reliability and Standardization for SiC Power Devices</li><li>Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes</li><li>Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs</li><li>Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiC^TM Substrate</li></ul>