The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Rezensionen / Stimmen
"The authors have certainly identified a gap in the literature ... Overall, the book is very informative and provides a strong foundation for work in this active research area."
-K. Alan Shore, Optics and Photonics News
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Für höhere Schule und Studium
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ISBN-13
978-1-040-20719-2 (9781040207192)
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Schweitzer Klassifikation
Introduction. Film Growth and Material Parameters. Principles of SiGe-HBTs. Design of SiGe-HBTs. Simulation of SiGe-HBTs. Strained-Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe-HBTs
