These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.
These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.
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978-3-0357-3642-7 (9783035736427)
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<ul><li>Preface</li><li>Chapter 1: Growth, Structure and Properties of Wide Bandgap Semiconductors</li><li>Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor</li><li>Synthesis of Diamond on SiC by Microwave Plasma Chemical Vapor Deposition: Comparison of Silicon-Face and Carbon-Face</li><li>High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl<sub>0.5</sub>Ga<sub>0.5</sub>N Regrowth</li><li>Epitaxial Growth of "Strain-Free" Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition</li><li>Investigation of Solution-Processed Ga<sub>2</sub>O<sub>3</sub> Thin Films and their Application in Dielectric Materials</li><li>The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes</li><li>Study on the Synthesis of SiC Powder Material by Using Induction Heating System</li><li>Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE</li><li>Chapter 2: Fabrication, Properties and Application of Wide Bandgap Semiconductor Devices</li><li>Characteristics and Drive Design Analysis of SiC</li><li>SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window</li><li>Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model</li><li>Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate</li><li>Normally-Off GaN Power Device Based on Stack AlGaN Barrier Structure and P-Type NiO Gate Electrode</li><li>Design and Fabrication of 4H-Sic Mosfets with Optimized JFET and p-Body Design</li><li>The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing</li><li>A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window</li><li>Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier</li><li>Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes</li><li>Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes</li><li>Broadband Ultraviolet Photodetector Based on Graphene/?-Ga<sub>2</sub>O<sub>3</sub>/GaN Heterojunction</li><li>Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing</li><li>Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes</li><li>Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT</li><li>Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes</li><li>Research of 3.3kV, 60A H-Bridge High-Voltage SiC Diode Modules</li></ul>
