Full-text papers selected by peer review from the submissions to the Asia Pacific Conference on Silicon Carbide and Related Materials (APCSRM 2022, November 14-16, 2022, Xuzhou, China) and presented in this book cover cutting-edge research on silicon carbide and related materials in the direction of materials, devices, and applications.
Sprache
Verlagsort
Verlagsgruppe
Zielgruppe
Illustrationen
Dateigröße
ISBN-13
978-3-0364-1053-1 (9783036410531)
DOI
Schweitzer Klassifikation
Preface
Chapter 1: Semiconductor Materials for Power Electronics
Electrical Properties of Heavily Al-Doped 4H-SiC
A Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiC
Characterization of SiC/SiO2 Interface State under Different NO Annealing
Chapter 2: Power Devi?es Designing
The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors
Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC
Influence of Acceptor Incomplete Ionization in p+ Emitter on SiC LTT with n-Type Blocking Base
Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module
Automatic Design of a Busbar in SiC Controller
