The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Reihe
Sprache
Verlagsort
Zielgruppe
Für höhere Schule und Studium
Illustrationen
6
238 farbige Abbildungen, 6 s/w Abbildungen
6 b/w and 238 col. ill.
Dateigröße
ISBN-13
978-3-11-057555-2 (9783110575552)
Schweitzer Klassifikation
Joachim Knoch, University Aachen, Germany.
