<ul><li>Preface and Committees</li><li>Plenary</li><li>Intrinsic Point Defects in Silicon Crystal Growth</li><li>Chapter 1: Silicon-Based and Advanced Semiconductor Materials</li><li>Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low-Dose SIMOX Technology</li><li>Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si</li><li>Electron Mobility in Moderately Doped Si<sub>1-x</sub>Ge<sub>x</sub></li><li>Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals</li><li>Chapter 2: Nanocrystals, Nanowires, Quantum Dots</li><li>Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon</li><li>Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy</li><li>Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells</li><li>Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering</li><li>Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study</li><li>C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon</li><li>Chapter 3: Crystalline Silicon for Solar Cells</li><li>Silicon PV Wafers: Mechanical Strength and Correlations with Defects and Stress</li><li>Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon</li><li>Coefficient of Diffusion in Crystals of Si<sub>1-x</sub>Ge<sub>x</sub>: Role of Preexponential Factor</li><li>Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy</li><li>Recombination Activity of Twin Boundaries in Silicon Ribbons</li><li>Fast Light-Induced Solid Phase Crystallization of Nanometer Thick Silicon Layers on Quartz</li><li>Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL</li><li>Chapter 4: Co-Integration of Si and Ge, III-V, Graphenes, Organo-Silica Devices</li><li>Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel</li><li>Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.</li><li>Chapter 5: Point Defects in Si</li><li>The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon</li><li>IR Studies on VO<sub>N</sub>, C<sub>I</sub>O<sub>I</sub> and C<sub>I</sub>C<sub>S</sub> Defects in Ge-Doped Cz-Si</li><li>Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon</li><li>Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties</li><li>Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin</li><li>1207cm<sup>-1</sup> Infrared Absorption Band in Carbon-Rich Silicon Crystal</li><li>Boron-Oxygen-Related Defect in Silicon</li><li>Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon</li><li>Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation</li><li>Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon</li><li>Chapter 6: Extended Defects</li><li>Microdefects in Heavily Phosphorus-Doped Czochralski Silicon</li><li>Recombination at Oxide Precipitates in Silicon</li><li>Iron Gettering at Slip Dislocations in Czochralski Silicon</li><li>Formation of Voids in SiO<sub>2</sub>/Si Substrate by Zn Implantation and Thermal Annealing</li><li>Effects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline Silicon</li><li>XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source</li><li>Chapter 7: Defects and Interfaces</li><li>Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface</li><li>Analysis of Contaminated Oxide-Silicon Interfaces</li><li>Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films</li><li>Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers</li><li>Stress Relaxation Mechanism by Strain in the Si-SiO<sub>2</sub> System and its Influence on the Interface Properties</li><li>Interaction of Point Defects with Impurities in the Si-SiO<sub>2</sub> System and its Influence on the Interface Properties</li><li>Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements</li><li>Chapter 8: Defect and Impurity Characterization</li><li>Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon</li><li>Spectroscopic Studies of Iron and Chromium in Germanium</li><li>New Results on the Bound Exciton Luminescence in Germanium</li><li>Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications</li><li>Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon</li><li>TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon</li><li>Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals</li><li>Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon</li><li>Oxygen Precipitation Studied by X-Ray Diffraction Techniques</li><li>Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements</li><li>Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions</li><li>Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping</li><li>
<i>In Situ</i> Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction</li><li>Structural Defect Studies of Semiconductor Crystals with Laue Topography</li><li>Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS</li><li>Chapter 9: Gettering, Passivation and Defect Engineering</li><li>Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles</li><li>Polycrystalline Silicon Layers with Enhanced Thermal Stability</li><li>Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals</li><li>Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium</li><li>Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity</li><li>Tailoring the Electrical Properties of Undoped GaP</li><li>Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure</li><li>Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon</li><li>Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge</li><li>Chapter 10: Advanced Solar Cells</li><li>Studying Light Soaking of Solar Cells by the Use of Solar Simulator</li><li>Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System</li><li>Light Trapping in Monocrystalline Si Solar Cells Using Back-Side Diffraction Gratings</li><li>Chapter 11: Silicon-Based Photonics</li><li>Visible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and Properties</li><li>Defect Engineering in 2D Photonic Crystals Fabricated by Electrochemical Etching of Silicon</li><li>Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix</li><li>Chapter 12: Modeling and Simulation</li><li>Bistable Defects as the Cause for NBTI and RTN</li><li>The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process</li><li>Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory</li><li>Homogeneous and Heterogeneous Nucleation of Oxygen in Si-CZ</li><li>Application of Double Crucible in Cz Si Crystal Growth</li><li>Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot</li></ul>