Optical Properties and Band Structure of Semiconductors, Volume 1 presents the experimental studies of the fundamental energy band structure of semiconductors and insulators. This book provides detailed information of the available measurement methods and results for a large number of both cubic and non-cubic materials.
Comprised of 10 chapters, this volume begins with an overview of the fundamental band structure of semiconductors. This text then discusses the instrumentation and methods available for the measurement of absorption coefficient, absolute reflection coefficient, and other optical properties of insulators and semiconductors primarily in their fundamental region. Other chapters consider the interband transitions in the one-electron approximation. The final chapter deals with the equivalence of the transverse and longitudinal dielectric constants in the frequency range under consideration.
This book is a valuable resource for solid state physicists. Readers and researchers with interest in the electron and optical properties of semiconductors and insulators will also find this book useful.
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ISBN-13
978-1-4831-5186-1 (9781483151861)
Schweitzer Klassifikation
Preface Acknowledgments1. Introduction 1.1. Historical 1.2. Optical Properties 1.3. Contents 2. Optical Constants and Despersion Relations 2.1. Plane Waves in Isotropic Media 2.2. Reflection and Transmission of Plane Waves 2.2.1. General Formula 2.2.2. Oblique Incidence Reflectivity 2.2.3. Azimuth and Phase Shift 2.2.4. Normal Incidence Reflectivity 2.2.5. Normal Incidence Transmission 2.3. Dispersion Relations 2.4. Sum Rules 3. Experimental Methods 3.1. Introduction 3.2. Equipment 3.2.1. Spectrometers and Monochromators 3.2.2. Sources 3.2.3. Detectors (Vacuum Ultraviolet) 3.2.4. Windows and Filters 3.2.5. Mirrors 3.2.6. Polarizers 3.3. Measurement Techniques 3.3.1. Reflectance Under Oblique Incidence 3.3.2. Measurement of Azimuth and Phase Angle 3.3.3. Measurement of Normal Incidence Reflectivity 3.3.4. Measurement of Normal Incidence Absorption and Reflectance 3.3.5. Measurement of Pressure and Strain Effects 3.3.6. Measurement of Electroreflectance 3.3.7. Measurement of Photoemission 3.4. Preparation of Samples4. Interband Transitions and Classification of Electronic States 4.1. Quantum Theory of Interband Transitions 4.2. Density of States 4.3. Behavior of the Optical Constants Near Interband Edges 4.4. Classification of Electronic States 4.4.1. Spatial symmetry 4.4.2. Spin-orbit coupling 4.5. Methods of Band Structure Calculation 4.5.1. General considerations 4.5.2. Free electron model 4.5.3. OPW and Pseudopotential Method 4.6. Selection Rules 5. Fundamental Optical Spectra of Cubic Semiconductors and Insulators 5.1. General 5.2. Direct Interband Transitions and van Hove Singularities 5.3. Group IV Semiconductors 5.4. Zincblende Semiconductors 5.5. Systematics -XIsoelectronic Sequences 5.6 Group IV VI and Group V Materials 5.6.1. Lead salts PbS, PbSe and PbTe 5.6.2. SnTe, GeTe and Group V Semimetals As, Sb and Bi 5.7. Alkali Halides 6. Fundamental Optical Spectra of Anisotropic Semiconductors and Insulators 6.1.General 6.2.Uniaxial Crystal 6.3.Biaxial Crystals 6.2.1. Wurtzite Materials 6.2.2. Bismuth Telluride 6.2.3. Selenium 6.2.4. Graphite 6.2.5. Rutile7. Deformation Phenomena 7.1. Hydrostatic Pressure 7.2. Piezoreflectance 7.2.1. Germanium 7.2.2. Silicon 8. Excitons 8.1. General 8.2. Excitons in Diamond and Zincblende Materials 8.3. Excitons in the Alkali Halides 8.4. Excitons in Layer Structure Materials 9. Elecro-Optical Effects. Photoelectric Emission 9.1. Electroabsorption 9.2. Electroreflectance 9.3. Photoelectric Emission 10. Plasma and Electron Energy-Loss Phenomena 10.1. D-Band Effects 10.2. Energy-Loss Spectra ReferencesIndex
