Silicon Carbide

1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique
4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
6) EPR Identification of Intrinsic Defects in 4H-SiC
7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC
9) Characterization of defects in silicon carbide by Raman spectroscopy
10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers
12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems
16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces
17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
18) Epitaxial Graphene: an new Material
19) Density Functional Study of Graphene Overlayers on SiC