This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.
Reihe
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Zielgruppe
Für höhere Schule und Studium
Für Beruf und Forschung
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Illustrations, unspecified
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ISBN-13
978-3-0357-0709-0 (9783035707090)
DOI
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Schweitzer Klassifikation
Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems
Novel Defect-Related Properties of Silicon
The Search for Tunnelling States in Bulk Silicon Disordered by Fast Neutron Irradiation
Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals
Dislocations in Semiconductors: Core Structure and Mobility
Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells
A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon
Copper Complexes in Silicon Crystals
The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing
X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures
Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si
Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si
Modelling Cu Diffusion into a Ta Barrier
Transmission Electron Microscopy of the Configuration of Cracks and the Defect Structure near to Cracks in Si
Study of the Localized Modes in ZnSe:P for the Elucidation of Site Symmetry
EBIC/XPS Study of Antimony Equilibrium Segregation at the Germanium Surface
