This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.
Reihe
Sprache
Verlagsort
Zielgruppe
Für höhere Schule und Studium
Für Beruf und Forschung
Illustrationen
Illustrations, unspecified
Dateigröße
ISBN-13
978-3-0357-0689-5 (9783035706895)
DOI
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Schweitzer Klassifikation
IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon
Calculation of Cd Diffusion Profiles in GaAs
Theory of Enhanced/Retarded Diffusion of Donor/Acceptor Dopants in Predoped Silicon
Ga Self-Diffusion in GaAs
