Silicon Carbide and Related Materials 2011

<ul><li>Preface, Sponsors, Committes and Overview</li><li>Chapter 1: SiC Bulk Growth</li><li>1.1 PVT, CVD, Modeling and Theory</li><li>Status of Large Diameter SiC Single Crystals</li><li>TSD Reduction by RAF (Repeated <i>a</i>-Face) Growth Method</li><li>Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals</li><li>Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter</li><li>Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals</li><li>Analysis of Growth Velocity of Si? Growth by the Physical Vapor Transport Method</li><li>Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method</li><li>Lateral Growth Expansion of 4H/6H-Si? M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy</li><li>Synthesis and Purification of Silicon Carbide Powders for Crystal Growth</li><li>Bulk and Surface Effects on the Polytype Stability in SiC Crystals</li><li>1.2 Solution Growth</li><li>Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution</li><li>SiC Growth by Solvent-Laser Heated Floating Zone</li><li>Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth</li><li>Control of Void Formation in 4H-SiC Solution Growth</li><li>Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt</li><li>Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow</li><li>Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent</li><li>Chapter 2: SiC Epitaxial Growth</li><li>2.1 Homoepitaxial Growth</li><li>SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor</li><li>Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination</li><li>Growth and Light Properties of Fluorescent SiC for White LEDs</li><li>High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4 degrees Off-Axis 4H-SiC</li><li>Epitaxial Growth of 4H-Si? Using Si₂(CH₃)₆+Si₂Cl₆+C₃H₈+H₂ System by Atmospheric Pressure Hot CVD Method</li><li>4H-SiC Epitaxial Growth on 2 degrees Off-Axis Substrates using Trichlorosilane (TCS)</li><li>Development of Vertical 3x2?LPCVD System for Fast Epitaxial Growth on 4H-SiC</li><li>Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions</li><li>Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles</li><li>Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases</li><li>In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors</li><li>Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method</li><li>Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method</li><li>Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications</li><li>Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates</li><li>Improvement of Homoepitaxial Layer Quality Grown on 4H-Si? Si-Face Substrate Lower than 1 Degree Off Angle</li><li>Surface Morphology Evolution after Epitaxial Growth on 4 degreesOff-Axis 4H-SiC Substrate</li><li>Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films</li><li>Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth</li><li>Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC</li><li>The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers</li><li>Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned Si? Substrate</li><li>Buried Selective Growth of p-Doped SiC by VLS Epitaxy</li><li>Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)</li><li>2.2 Heteroepitaxial and Heteropolytypic Growth</li><li>Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon</li><li>Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD</li><li>Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates</li><li>CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates</li><li>On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates</li><li>Si_xC_y Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties</li><li>Chapter 3: Physical Properties and Characterization of SiC</li><li>3.1 Impurities, Intrinsic Point Defects and Carrier Lifetime</li><li>Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from <i>Ab Initio</i> Calculations</li><li>Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC</li><li>Identification of Niobium in 4H-SiC by EPR and <i>Ab Initio</i> Studies</li><li>Mn Implantation for New Applications of 4H-SiC</li><li>Diffusion and Gettering of Transition Metals in 4H-SiC</li><li>Chlorine in SiC: Experiment and Theory</li><li>Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide</li><li>Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC</li><li>Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model</li><li>On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps</li><li>Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?</li><li>Excitation Properties of Silicon Vacancy in Silicon Carbide</li><li>Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy</li><li>Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC</li><li>Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency</li><li>Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy</li><li>Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding</li><li>Long Carrier Lifetimes in n-Type 4H-SiC Epilayers</li><li>Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers</li><li>Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation</li><li>High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers</li><li>Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers</li><li>Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches</li><li>Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer</li><li>Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes</li><li>3.2 Extended Defects (See also Section 3.4)</li><li>Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers</li><li>Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals</li><li>X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC</li><li>Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC</li><li>Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy</li><li>Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers</li><li>Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC</li><li>Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC</li><li>Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT-Grown Substrates with Associated Stacking Faults</li><li>Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth</li><li>Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals</li><li>Correlation between Surface Morphological Defects and Crystallographic Defects in SiC</li><li>Characterization of Triangular-Defects in 4 degrees off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy</li><li>Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer</li><li>Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode</li><li>Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope</li><li>Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas</li><li>Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate</li><li>Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes</li><li>Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers</li><li>Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC</li><li>Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density</li><li>Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging</li><li>Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates</li><li>Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals</li><li>
<i>Ab Initio</i> Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping</li><li>On the Twin Boundary Propagation in (111) 3C-SiC Layers</li><li>Defect Structures at the Silicon/3C-SiC Interface</li><li>3.3 SiC-SiO2 Interface (See also Sections 5.1 and 6.4)</li><li>Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces</li><li>Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap</li><li>Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs</li><li>Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors</li><li>Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures</li><li>Silicon Carbide-Silicon Dioxide Transition Layer Mobility</li><li>Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs</li><li>Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation</li><li>Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices</li><li>Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs</li><li>Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors</li><li>Low Frequency Noise in 4H-SiC Lateral JFET Structures</li><li>3.4 Stress, Structural and Mechanical Properties (See also Section 3.2)</li><li>Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide</li><li>Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals</li><li>Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC</li><li>High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals</li><li>On the Stability of 3C-SiC Single Crystals at High Temperatures</li><li>XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal</li><li>Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress</li><li>Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si</li><li>4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering</li><li>Mechanical Properties of Cubic SiC, GaN and AlN Thin Films</li><li>Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications</li><li>Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates</li><li>Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever</li><li>Single-Crystal SiC Resonators by Photoelectrochemical Etching</li><li>Amorphous Silicon Carbide (<i>?</i>-SiC) Thin Square Membranes for Resonant Micromechanical Devices</li><li>Amorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical Microdevices</li><li>3.5 Fundamental Properties, Nanostructures, Surfaces and Miscellaneous Characterization</li><li>Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD</li><li>OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients</li><li>Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors</li><li>Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime</li><li>Emission Enhancement of SiC/SiO₂ Core/Shell Nanowires Induced by the Oxide Shell</li><li>Theoretical Study of Thermoelectric Properties of SiC Nanowires</li><li>GaAs Nanowires: A New Place to Explore Polytype Physics</li><li>The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface</li><li>Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible</li><li>Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching</li><li>First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge</li><li>Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material</li><li>Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC</li><li>Chapter 4: Graphene</li><li>4.1 Graphene Growth, Characterization and Theory</li><li>Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface</li><li>Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth</li><li>Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation</li><li>Graphene on Carbon-Face Si?{0001} Surfaces Formed in a Disilane Environment</li><li>The Registry of Graphene Layers Grown on SiC(000-1).</li><li>Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)</li><li>CVD Growth of Graphene on 2'' 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity</li><li>Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)</li><li>Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide</li><li>Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces</li><li>Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)</li><li>Electrical Characterization of the Graphene-SiC Heterojunction</li><li>Epitaxial Single-Layer Graphene on the SiC Substrate</li><li>4.2 Graphene Processing</li><li>Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation</li><li>Studies of Li Intercalation into Epitaxial Graphene on SiC(0001)</li><li>Plasma-Based Chemical Modification of Epitaxial Graphene</li><li>Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy</li><li>Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy</li><li>4.3 Graphene Devices and Sensors</li><li>High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene</li><li>Gated Epitaxial Graphene Devices</li><li>Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions</li><li>T- and Y-Branched Three-Terminal Junction Graphene Devices</li><li>Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection</li><li>Temperature Dependent Chemical Sensitivity of Epitaxial Graphene</li><li>Chapter 5: Processing of SiC</li><li>5.1 MOS Processing, SiC-SiO2 Interface and Other Dielectrics (See also Sections 3.3 and 6.4)</li><li>Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates</li><li>Challenges of High-Performance and High-Reliablity in SiC MOS Structures</li><li>Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices</li><li>Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs</li><li>Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces</li><li>Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface</li><li>Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States</li><li>Improved Deposited Oxide Interfaces from N₂Conditioning of Bare SiC Surfaces</li><li>Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide</li><li>Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC</li><li>The Effects of Phosphorus at the SiO₂/4H-SiC Interface</li><li>SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments</li><li>Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide</li><li>Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation</li><li>Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions</li><li>Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices</li><li>Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors</li><li>Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures</li><li>A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)</li><li>Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well</li><li>Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)</li><li>Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face</li><li>Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs</li><li>Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters</li><li>Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination</li><li>Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces - a Radiation Hardness Study of Dielectrics</li><li>High Temperature Reliability of High-<i>k</i>/SiC MIS Hydrogen Sensors</li><li>5.2 Doping, Ion Implantation and Contacts</li><li>Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process</li><li>High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC</li><li>High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices</li><li>Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC</li><li>The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC</li><li>The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC</li><li>Electroless Nickel for N-Type Contact on 4H-SiC</li><li>Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide</li><li>Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC</li><li>GaZnO as a Transparent Electrode to Silicon Carbide</li><li>Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range</li><li>Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles</li><li>5.3 Cutting, Etching, Micro- and Nano-Processing</li><li>Cutting Speed of Electric Discharge Machining for SiC Ingot</li><li>Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode</li><li>Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity</li><li>High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching</li><li>Novel Cleaning Method of SiC Wafer with Transition Metal Complex</li><li>Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment</li><li>SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements</li><li>Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning</li><li>Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method</li><li>Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si</li><li>ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures</li><li>Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy</li><li>Chapter 6: SiC Devices, Circuits and Systems</li><li>6.1 Schottky Barrier Diodes</li><li>Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes</li><li>Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature</li><li>Performance of a 650V SiC Diode with Reduced Chip Thickness</li><li>A Fully Electrically Isolated Package for High Temperature SiC Sensors</li><li>Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation</li><li>4H-SiC Trench Structure Schottky Diodes</li><li>Influence of Anode Layout on the Performance of SiC JBS Diodes</li><li>Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT</li><li>Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses</li><li>6.2 PiN and Heterojunction Diodes</li><li>12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes</li><li>Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes</li><li>Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 degreesC</li><li>11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode</li><li>Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode</li><li>600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide</li><li>Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes</li><li>Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices</li><li>Positive Temperature Coefficient SiC PiN Diodes</li><li>Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers</li><li>Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation</li><li>Physical Modelling of 4H-SiC PiN Diodes</li><li>Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices</li><li>Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches</li><li>Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control</li><li>Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions</li><li>6.3 JFETs and SITs</li><li>Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors</li><li>Demonstration of SiC Vertical Trench JFET Reliability</li><li>Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing</li><li>Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors</li><li>Characterization of SiC JFET in Novel Packaging for 1 MHz Operation</li><li>Packaging Technologies for 500 degreesC SiC Electronics and Sensors</li><li>High Voltage SiC Vertical JFET for High Power RF Applications</li><li>Design of an Integrated SiC JFET Power Switch and Flyback Diode</li><li>A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA</li><li>Fabrication Issues of 4H-SiC Static Induction Transistors</li><li>6.4 MOSFETs (See also Sections 3.3 and 5.1)</li><li>High Performance SiC IEMOSFET/SBD Module</li><li>Development of 1200 V, 3.7 m?-cm² 4H-SiC DMOSFETs for Advanced Power Applications</li><li>High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs</li><li>690V, 1.00 m?cm² 4H-SiC Double-Trench MOSFETs</li><li>SiC MOSFET Reliability Update</li><li>Material Defects and Rugged Electrical Power Switching in Semiconductors</li><li>Comparative Study of SiC MOSFETs in High Voltage Switching Operation</li><li>Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing</li><li>4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications</li><li>Integration of Temperature and Current Sensors in 4H-SiC VDMOS</li><li>SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching</li><li>Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs</li><li>4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics</li><li>High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility</li><li>Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length</li><li>6.5 Bipolar Transistors</li><li>Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process</li><li>Large Area 1200 V SiC BJTs with ?>100 and ?_ON<3 m?cm²</li><li>1200 V-Class 4H-SiC "Super" Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability</li><li>Investigation of Current Gain Degradation in 4H-SiC Power BJTs</li><li>Development of 15 kV 4H-SiC IGBTs</li><li>Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC</li><li>An Investigation of Material Limit Characteristics of SiC IGBTs</li><li>Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair</li><li>6.6 Thyristors and GTOs</li><li>12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination</li><li>High <i>dI/dt</i> Pulse Switching of 1.0 cm² SiC GTOs</li><li>Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications</li><li>Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor</li><li>Comparison of SiC Thyristors with Differently Etched JTEs</li><li>High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection</li><li>Bipolar Degradation in 4H-SiC Thyristors</li><li>Pulse Characterization of Optically Triggered SiC Thyristors</li><li>Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications</li><li>6.7 Sensors and Photodetectors</li><li>Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 degreesC</li><li>Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging</li><li>Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics</li><li>Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments</li><li>4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes</li><li>A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors</li><li>Characterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure Applications</li><li>High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator</li><li>6.8 Systems and Circuits</li><li>High Temperature Silicon Carbide Power Modules for High Performance Systems</li><li>10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies</li><li>SiC JFET Power Modules for Reliable 250 degreesC Operation</li><li>A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter</li><li>Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes</li><li>Switching Losses in a SiC-Based DC-DC Multilevel Boost Converter</li><li>High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators</li><li>SiC Solid-State Disconnect for High Power System Applications</li><li>A 450 degreesC High Voltage Gain AC Coupled Differential Amplifier</li><li>Bipolar Integrated OR-NOR Gate in 4H-SiC</li><li>300C Capable Digital Integrated Circuits in SiC Technology</li><li>Reliability of Silicon Carbide Integrated Circuits at 300 degreesC</li><li>Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator</li><li>Chapter 7: Related Materials</li><li>7.1 Nanomaterials</li><li>Conversion of Si Nanowires into SiC Nanotubes</li><li>Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates</li><li>Fabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon Photodiodes</li><li>7.2 III-Nitrides</li><li>Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics</li><li>Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals</li><li>Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing</li><li>Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage</li><li>Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues</li><li>Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs</li><li>7.3 Diamond</li><li>Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces</li><li>Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films</li><li>Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate</li><li>7.4 n-ZnO/p-SiC Heterojunctions, Novel Nitride Semiconductors</li><li>Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode</li><li>Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC</li><li>CdGeN₂ and ZnGe_0.5Sn_0.5N₂: Two New Nitride Semiconductors with Band Gaps in the Blue-Green</li></ul>