Heterostructure Lasers Part B

PrefaceAcknowledgmentsContents of Part AChapter 5 ¿ Heterostructure Materials 5.1 Introduction 5.2 III-V Binary Compounds 5.3 III-V Ternary Solid Solutions 5.4 III-V Binary and Ternary Lattice-Matching Systems for Heterostructure Lasers 5.5 III-V Binary and Quaternary Lattice-Matching Systems for Heterostructure Lasers 5.6 Compositional Grading for Heterostructure Lasers 5.7 IV-VI Binary Compounds and Their Solutions 5.8 Concluding Comments References Chapter 6 ¿ Phase Equilibria and Heteroepitaxy 6.1 Introduction 6.2 Phase Equilibria in III-V Systems 6.3 Impurity Incorporation in III-V Compounds 6.4 Phase Equilibria in IV-VI Systems 6.5 Liquid-Phase Epitaxy 6.6 Molecular-Beam Epitaxy 6.7 Chemical-Vapor Deposition 6.8 Concluding Comments References Chapter 7 ¿ Fabrication and Operating Characteristics 7.1 Introduction 7.2 Device Fabrication 7.3 Single-Heterostructure Broad-Area Lasers 7.4 Double-Heterostructure Broad-Area Lasers 7.5 Separate-Confinement Broad-Area Lasers 7.6 Stripe-Geometry Laser Fabrication 7.7 Threshold Current of Stripe-Geometry Lasers 7.8 Thermal Properties of Stripe-Geometry Lasers 7.9 Gain-Coefficient Measurements 7.10 Gain Guiding in Stripe-Geometry Lasers 7.11 Emission Properties of Stripe-Geometry Lasers 7.12 Distributed-Feedback Lasers 7.13 Concluding Comments References Chapter 8 ¿ Degradation 8.1 Introduction 8.2 Catastrophic Failure 8.3 The Dark-Line Defect (DLD) 8.4 Gradual Degradation of GaAs-AlxGa1-xAs Stripe-Geometry Lasers 8.5 Concluding Comments References Index to Part AIndex to Part B