Physics of Dielectrics for the Engineer

PrefaceList of SymbolsPart 1. Matter in a Constant Electric Field I. Introduction - Condensed review of electrostatics II. The potential of a group of charges II.1. Multipolar expansions II.2. Multipolar expansion of a single point charge II.3. Multipolar expansion of a real dipole III. Dipoles induced in an applied field III.1. Quantum mechanical approach of electronic polarizability III.2. Elementary models for spherical atoms and molecules III.3. Elementary models for non-spherical atoms and molecules III.4. Harmonic oscillator model for the ionic polarizability IV. Statistical theories of dipole orientation in an applied field IV.1. Case of free point dipoles (Langevin's theory) IV.2. Case of point dipoles in crystal lattices IV.3. Case of polarizable dipoles with ¿a > O V. Theories relating the molecular quantities to the macroscopic ones V.1. Dilute phases V.2. Condensed non-polar phases. Lorentz theory V.3. Condensed phases. Onsager theory V.4. The Kerr electro-optic effectPart 2. Matter in an Alternating Field VI. The complex permittivity VI.1. Definition of e* and s*. Propagation of an electromagnetic wave VI.2. The various types of charges and charge groups, and the corresponding interactions VI.3. The response of a linear material to a variable field VI.4. Case of an a.c. field. Kramers-Kronig relations VII. Relaxations VII.1. Introductory remarks VII.2. Mechanical analogue of a relaxation VII.3. Advanced formalism. Definitions and theorems VII.4. Application to dipole relaxation - Debye relation VII.5. The e(e1) representation (Argand diagram) VII.6. Corrections to the Debye theory VII.7. Interfacial relaxation. Maxwell-Wagner effect VII.8. Dipole relaxation of defects in crystal lattices VII.9. Space-charge polarization and relaxation VII.10. Recent work. Many-body interpretation VIII. Resonances VIII.1. The linear oscillator model VIII.2. The unidimensional polar latticePart 3. Dissipative Effects under High Fields IX. Insulators and wide-gap semiconductors IX.1. Intrinsic conduction and impurity conduction IX.2. Injection processes X. Space-charge limited, injection-controlled conduction X.1. Plane-parallel configuration X.2. Cylindrical configuration X.3. Spherical configuration X.4. Point-plane configuration XI. Field-induced intrinsic conduction XI.1. The Poole-Frenkel effect XI.2. Field-induced dissociation XI.3. General formulation of conduction with generation and recombination of carriers XII. Dielectric strength XII.1.Thermal breakdown XII.2.Intrinsic breakdown processes XII.3.Effect of pulse duration XII.4.Experimental proceduresGeneral Bibliography - Part 1 - Part 2 - Part 3Index