Semiconductor Lasers

Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Preface Part I: Fundamentals of semiconductor lasers Chapter 1: Principles of semiconductor lasers Abstract: 1.1 Introduction 1.2 The basic laser diode 1.3 Key physical concepts 1.4 Absorption and gain in low dimensional semiconductor structures 1.5 Recombination processes 1.6 Gain-current relations 1.7 Temperature dependence of threshold current 1.8 Rate equations 1.9 Future trends 1.10 Acknowledgements Chapter 2: Photonic crystal lasers Abstract: 2.1 Introduction 2.2 Lasing threshold of photonic crystal lasers (PhCLs) 2.3 Photonic crystal nanobeam lasers 2.4 Photonic crystal disk lasers 2.5 Conclusion and future trends 2.6 Acknowledgements Chapter 3: High-power semiconductor lasers Abstract: 3.1 Introduction: theory and design concept 3.2 Single emitters 3.3 Array concept for power scaling 3.4 Conclusion and future trends Chapter 4: Semiconductor laser beam combining Abstract: 4.1 Introduction to laser beam combining 4.2 Experiments on external cavity broad-area laser diode arrays 4.3 Modeling the dynamics of a single-mode semiconductor laser array in an external cavity 4.4 Conclusion 4.5 Acknowledgments Chapter 5: Ultrafast pulse generation by semiconductor lasers Abstract: 5.1 Introduction 5.2 Gain-switching 5.3 Important developments in gain-switched semiconductor lasers (SLs) 5.4 Q-switching 5.5 Mode-locking (ML) in semiconductor lasers: an overview 5.6 The main predictions of mode-locked laser theory 5.7 Important tendencies in optimising the ML laser performance 5.8 Novel mode-locking principles 5.9 Overview of applications of mode-locked diode lasers 5.10 Conclusion 5.11 Acknowledgements Part II: Visible and near-infrared lasers and their applications Chapter 6: Nonpolar and semipolar group III-nitride lasers Abstract: 6.1 Introduction 6.2 Applications of group III-nitride lasers 6.3 Introduction to properties of III-nitrides 6.4 Optical properties of nonpolar and semipolar III-nitrides 6.5 Substrates, crystal growth and materials issues 6.6 Optical waveguides and loss 6.7 Fabrication techniques 6.8 Nonpolar and semipolar laser history and performance 6.9 Future trends 6.10 Sources of further information and advice Chapter 7: Advanced self-assembled indium arsenide (InAs) quantum-dot lasers Abstract: 7.1 Introduction 7.2 High-density and highly uniform InAs quantum dots 7.3 Quantum-dot Fabry-Pérot (FP) and distributed-feedback (DFB) lasers for optical communication 7.4 Quantum-dot FP and DFB lasers for high-temperature application 7.5 QD Laser, Inc 7.6 Silicon hybrid quantum-dot lasers 7.7 Conclusion 7.8 Acknowledgements Chapter 8: Vertical cavity surface emitting lasers (VCSELs) Abstract: 8.1 Introduction 8.2 Device structure 8.3 Vertical cavity surface emitting laser (VCSEL) optical performance 8.4 Conclusion 8.5 Acknowledgements Chapter 9: Semiconductor disk lasers (VECSELs) Abstract: 9.1 Introduction 9.2 Principles of operation 9.3 Intracavity frequency control 9.4 Pulsed operation 9.5 Future trends and applications 9.6 Sources of further information and advice Chapter 10: Hybrid silicon lasers Abstract: 10.1 Introduction 10.2 Fundamentals of Si lasers 10.3 Hybrid Si laser-based photonic integrated circuits 10.4 Conclusion Part III: Mid- and far-infrared lasers and their applications Chapter 11: Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects Abstract: 11.1 Introduction 11.2 Diode lasers operating below 2.5 µm 11.3 Diode lasers for spectral range above 3 µm 11.4 Metamorphic GaSb-based diode lasers 11.5 Acknowledgements Chapter 12: Interband cascade (IC) lasers Abstract: 12.1 Introduction 12.2 Operating principle of interband cascade (IC) lasers 12.3 Early development and challenges 12.4 Recent progress and new developments 12.5 Future trends and conclusion 12.6 Acknowledgments Chapter 13: Terahertz (THz) quantum cascade lasers Abstract: 13.