Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling.
The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples.
The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology.
- Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures
- Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field
- Each chapter starts with a didactic introduction on the technique
- The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
Auflage
Sprache
Verlagsort
Verlagsgruppe
Elsevier Science & Techn.
Dateigröße
ISBN-13
978-0-444-59549-2 (9780444595492)
Schweitzer Klassifikation
Chapter 1. Introduction (C. Lamberti)Chapter 2. Ab-initio studies of structural and electronic properties (M. Peressi, A. Baldereschi and S. Baroni)Chapter 3. Electrical and optical properties of heterostructures (TBC)Chapter 4. Strain and composition determination in semiconducting heterostructures by high resolution X-ray diffraction (C. Ferrari and C. Bocchi)Chapter 5. Transmission Electron Microscopy techniques for imaging and composition evaluation in Semiconductor Heterostructures (L. Lazzarini, L. Nasi and V. Grillo)Chapter 6. Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence (S. Sanguinetti, M. Guzzi and M. Gurioli)Chapter 7. Power dependent cathodoluminescence in III-Nitrides heterostructures: from internal field screening to controlled band gap modulation (G. Salviati, L. Lazzarini, N. Armani, F. Rossi and V. Grillo)Chapter 8. Raman Spectroscopy (D. Wolverson)Chapter 9. X-ray absorption fine structure spectroscopy (F. Boscherini)Chapter 10. Nanostructures in the light of synchrotron radiation: surface sensitive x-ray techniques and anomalous scattering (T. Metzger, J. Eymery, V. Favre-Nicolin, G. Renaud, H. Renevier and T. Schülli)Chapter 11. Grazing Incidence Diffraction Anomalous Fine Structure to study the structural properties of semiconductor nanostructures (M. Grazia Proietti, J. Coraux and H. Renevier)Chapter 12. The Role of Photoemission Spectroscopies in Heterojunction Research (G. Margaritondo)Chapter 13. EPR of interfaces and nanolayers in semiconductor heterostructures (A. Stesmans and V.V. Afans'ev)
