This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Reihe
Auflage
Softcover reprint of the original 1st ed. 2017
Sprache
Verlagsort
Zielgruppe
Illustrationen
83
83 s/w Abbildungen
XVI, 124 p. 83 illus.
Maße
Höhe: 235 mm
Breite: 155 mm
Dicke: 8 mm
Gewicht
ISBN-13
978-981-13-5123-5 (9789811351235)
DOI
10.1007/978-981-10-4382-6
Schweitzer Klassifikation
Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song's group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.
