I Growth of Crystalline Silicon Carbide.- Recent Progress in Epitaxial Growth of SiC.- Si1-yCy Alloys - Extending Si-Based Heterostructure Engineering.- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers.- Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method.- Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply.- Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD.- Effects of CH3Cl Gas on Heteroepitaxial Growth of (?-SiC on Si(111) by Chemical Vapor Deposition.- Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates.- Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition.- Growth and Characterization of ?-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy.- Atomic Layer Control of ?-SiC(001) Surface.- Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method.- Liquid Phase Epitaxy of SiC-AlN Solid Solutions.- Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources.- Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System.- AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate.- II Characterization of Crystalline Silicon Carbide.- Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC.- Nitrogen Impurities in 3C-SiC Epilayers.- Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiC.- Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers.- EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SÍC Epilayers.- The Structure of the D-Center in Silicon Carbide - A Study with Electron Nuclear DoubleResonance.- Oxidation Studies for 6H-SiC.- Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model.- Metallization Studies on Epitaxial 6H-SiC.- TEM Study of ?-SiC Films Grown on (111) Silicon Substrates.- Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies.- Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM.- Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD.- Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide.- Optically Induced Near-IR Absorption Lines in 6H-SiC.- Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates.- Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra.- III Growth and Characterization of Polycrystalline, Microcrystalline, and Amorphous Silicon Carbide.- Novel Feedstocks for a-SiC:H Films.- Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide.- Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD.- Formation of SiC for Microelectronic Applications by C Implantation into Doped a-S.- Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000°C.- Si?C1?? Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor.- Low Temperature PECVD Growth and Characterization of a-SiC:H Films Deposited from Silacyclobutane and Silane/Methane Precursor Gases.- Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method.- IV Applications.- Applications for 6H-Silicon Carbide Devices.- HBTs Using a-SiC and µc-Si.- Impact of SiC on Power Devices.-SiC?:F Hetero-Emitter and Epitaxial-Base Bipolar Transistors.- A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors.- The Development of ECR-CVD SiC Coatings for X-Ray Mask Membranes.- Pattern Etching of Crystalline SiC by KrF Excimer Laser.- Electrical Characterization of PiN Diode Structures in 6H-SiC.- High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC.- Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment.- Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC.- Fabrication and Electrical Properties of ?-SiC/Si and Poly-SiC/Si Solar Cells.- Simulations of Ge and C Implantations to Form Si1??Ge? BJT.- The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide.- Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes.- High-Temperature and High-Voltage Diamond Devices.- Gamma-Ray Irradiation Effects on Cubic Silicon Carbide Metal-Oxide-Semiconductor Structure.- Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation.- Characterization of Ge and C Implanted Si Diodes.- Selective Growth of SiC and Application to Heterojunction Devices.- Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide.- Effect of H2 Additive on Reactive Ion Etching of ?-SiC in CHF3/O2 Plasma.- Index of Contributors.
