High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.
Provides basic knowledge about FET devices
Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
Discusses fabrication and characterization of high-k materials
Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
Offers detailed application of high-k materials for advanced FET devices
Considers future research directions
This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Reihe
Sprache
Verlagsort
Verlagsgruppe
Illustrationen
167 s/w Abbildungen, 11 s/w Photographien bzw. Rasterbilder, 156 s/w Zeichnungen, 11 s/w Tabellen
11 Tables, black and white; 156 Line drawings, black and white; 11 Halftones, black and white; 167 Illustrations, black and white
Maße
Höhe: 234 mm
Breite: 156 mm
Dicke: 10 mm
Gewicht
ISBN-13
978-0-367-63969-3 (9780367639693)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Klassifikation
Dr. Shubham Tayal is Assistant Professor, Department of Electronics and Communication Engineering, SR University, Warangal, India. He completed his Ph.D in VLSI from NIT, Kurukshetra. He has contributed 14 (10 - SCI/SCIE, 04 - Others) research papers in international journals, 2 research papers to IEEE Conferences, and 2 research papers to other national conferences. His research interests include simulation and modelling of multi-gate semiconductor devices, device-circuit co-design in digital/analog domain, and low power VLSI design.
Dr. Parveen Singla is Professor in Electronics & Communication Engineering, Department of Chandigarh Engineering College- Chandigarh Group of Colleges, Landran, Mohali, Punjab. He did his Bachelor of Engineering in Electronics & Communication Engineering with honors from Maharishi Dayanand University, Rohtak, Master in Technology in Electronics & Communication Engineering with honors from Kurukshetra University, Kurukshetra & PhD in Communication Systems from IKG Punjab Technical University, Jalandhar, India. He has 16 years of experience in the field of teaching and research. He has published more than 35 papers in various reputed journals and national and international conferences. He also organised more than 30 technical events for students in order to enhance their technical skills and received Best International Technical Event Organiser Award. He is the guest editor of various reputed journals. His interest area includes drone technology, wireless networks, smart antennas and soft computing.
Dr. J. Paulo Davim received his Ph.D. degree in Mechanical Engineering in 1997, M.Sc. degree in Mechanical Engineering (materials and manufacturing processes) in 1991, Mechanical Engineering degree (5 years) in 1986, from the University of Porto (FEUP), the Aggregate title (Full Habilitation) from the University of Coimbra in 2005 and the D.Sc. (Higher Doctorate) from London Metropolitan University in 2013. He is Senior Chartered Engineer by the Portuguese Institution of Engineers with an MBA and Specialist titles in Engineering and Industrial Management as well as in Metrology. He is also Eur Ing by FEANI-Brussels and Fellow (FIET) of IET-London. Currently, he is Professor at the Department of Mechanical Engineering of the University of Aveiro, Portugal. He is also distinguished as honorary professor in several universities/colleges. He has more than 30 years of teaching and research experience in Manufacturing, Materials, Mechanical and Industrial Engineering, with special emphasis in Machining & Tribology. He has also interest in Management, Engineering Education and Higher Education for Sustainability. He has guided large numbers of postdoc, Ph.D. and master's students as well as has coordinated and participated in several financed research projects. He has received several scientific awards and honours. He has worked as evaluator of projects for ERC-European Research Council and other international research agencies as well as examiner of Ph.D. thesis for many universities in different countries. He is the Editor in Chief of several international journals, Guest Editor of journals, books Editor, book Series Editor and Scientific Advisory for many international journals and conferences. Presently, he is an Editorial Board member of 30 international journals and acts as reviewer for more than 100 prestigious Web of Science journals. In addition, he has also published as editor (and co-editor) more than 150 books and as author (and co-author) more than 15 books, 100 book chapters and 500 articles in journals and conferences (more than 250 articles in journals indexed in Web of Science core collection/h-index 55+/9500+ citations, SCOPUS/h-index 60+/12000+ citations, Google Scholar/h-index 77+/19500+ citations).
Herausgeber*in
University of Petroleum and Energy Studies, India
University of Aveiro, Portugal
Chapter 1 Introduction to Multi-Gate FET Devices
Chapter 2 High-k Gate Dielectrics and Metal Gate Stack Technology for
Advance Semiconductor Devices: An Overview
Chapter 3 Influence of High-k Material in Gate Engineering and in
Multi-Gate Field Effect Transistor Devices
Chapter 4 Trap Charges in High-k and Stacked Dielectric
Chapter 5 Impact of High-k Dielectric on the Gate-Induced Drain
Leakage of Multi-Gate FETs
Chapter 6 Advanced FET Design Using High-k Gate Dielectric and
Characterization for Low-Power VLSI
Chapter 7 Simulation and Analysis of Gate Stack DG MOSFET with
Application of High-k Dielectric Using Visual TCAD
Chapter 8 Novel Architecture in Gate All-Around (GAA) MOSFET
with High-k Dielectric for Biomolecule Detection
Chapter 9 Asymmetric Junctionless Transistor: A SRAM
Performance Study
Chapter 10 Performability Analysis of High-k Dielectric-Based
Advanced MOSFET in Lower Technology Nodes
Index
