Introduction
1. Semiconductor and Material Fundamentals for CMOS
1.1 Bulk Bandstructure of Si and Strained-Silicon
1.2 Transport is Si: Drift-Diffusion and Mobility
2. CMOS Transistor - from Generic Physics to an Industrial World
2.1 Basics of CMOS
2.2 Real World Transistor: the Voltage Doping Transformation (MASTAR model)
2.3 Advanced devices physics:MASTAR for Fully Depleted Channels (Single and Double Gate)
2.4 Quasi-Ballistic transport in ultra-short CMOS Devices
3. Non-Classical Materials for Advanced CMOS
3.1 New materials for CMOS: Ge and III-V (Band Structure, Mobilty)
3.2 High-K
3.3 Silicides
3.4 Metal Gates
4. Non-Classical Transistor Structures
4.1 Shortcomings of the Bulk structure
4.2. SOI
4.3 FDSOI
4.4 SON
4.5 DG, GAA, FinFET, TriGATE
4.6 What Device for What Applications (examples and exercices)
5. Fabrication and Process Challenges
5.1 Isolation
5.2 Gate-stack
5.3 Junction module
5.4 Interconnects
6. Memory Devices
6.1 Flash
6.2 DRAM (classic, capa-less, etc)
6.3 PCM
6.4 FeRAM
6.5 MRAM
6.6 Emerging
7. Elements of Circuits
7.1 Design rules and Design Kits
7.2 Extraction of SPICE parameters using MASTAR models ? Virtual technology
7.3 Basic Logic Function (Inverter, NAND, NOR)
7.4 Basic Memory Circuits (SRAM, DRAM ?)
7.5 Simulation of Circuits using MASTAR/SPICE (inlc. Examples)
8. Emerging Technologies
8.1 SET
8.2 CNT
8.3 RT
8.4 Spin transistor
8.5 Benchmark
9. System Perspective
9.1 Specialization of technologies
9.2 Low power approaches
9.3 Variability and Manufacturability
9.4 Reliability of industrial products
9.5 CMOS Roadmap
Appendix:
For chapter 1,2, 3, 4: commented exercises and example on CDROM using MASTAR model.
