Shallow Impurities in Semiconductors, Proceedings of the 3rd INT Conference on Shallow Impurities in Semiconductors held at Linkoping, Sweden, 10-12 August 1988

Shallow impurities in semiconductors, well established as the backbone of semiconductor applications in electronics, continue to play an important role in today's research. The Third International Conference on Shallow Impurities in Semiconductors was organised to critically review some of the recent and current developments, with emphasis given to certain topics. These included shallow impurities in quantum structures, silicon and germanium, thermal donors and related defects in silicon, DX centres in III-V compounds, hydrogen passivation and diffusion of shallow impurities. Shallow Impurities in Semiconductors 1988 brings together selected papers from this conference, both invited and contributed. A broad range of physical phenomena related to shallow impurities in a large number of semiconductor materials are included. These proceedings should be of wide interest, both in the physics community and in the broad engineering field of microelectronics.