The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Produkt-Info
Reihe
Auflage
Sprache
Verlagsort
Verlagsgruppe
Springer International Publishing
Zielgruppe
Editions-Typ
Illustrationen
177
145 farbige Abbildungen, 177 s/w Abbildungen
XX, 535 p. 322 illus., 145 illus. in color.
Maße
Höhe: 241 mm
Breite: 160 mm
Dicke: 36 mm
Gewicht
ISBN-13
978-3-030-43868-5 (9783030438685)
DOI
10.1007/978-3-030-43869-2
Schweitzer Klassifikation
Dr. rer. nat. Udo W. Pohl, professor of experimental physics, studied physics in Aachen and Berlin, Germany, and received his Ph.D. degree in 1988 from the Technical University of Berlin, where he is currently principal investigator in the Institute of Solid State Physics. He is a member of the German Physical Society, participated in international conference committees, and has given keynote addresses at international conferences. Since the early 1990ies he has given lectures on semiconductor physics and epitaxy. In 2009, he was appointed Adjunct Professor of Physics at Technical University of Berlin. He is series editor of Materials Sciences, has authored over 200 journal articles and conference papers, the books Epitaxy of Semiconductors and - together with Prof. Dr. Karl W. Böer - Semiconductor Physics, thirteen book contributions, and patents. His current research interests include physics and epitaxy of semiconductor nanostructures and devices.
1 Introduction1.1 Epitaxy1.2 Issues of Epitaxy2 Structural Properties of Heterostructures2.1 Basic Crystal Structures2.2 Elastic Properties of Heterostructures2.3 Dislocations2.4 Defects in Organic Crystals2.5 Structural Characterization using X-ray Diffraction3 Electronic Properties of Heterostructures3.1 Bulk Properties3.2 Band Offsets3.3 Electronic States in Low-Dimensional Structures4 Thermodynamics of Epitaxial Layer-Growth4.1 Phase Equilibria4.2 Crystalline Growth5 Atomistic Aspects of Epitaxial Layer-Growth5.1 Surface Structure5.2 Kinetic Process Steps in Layer Growth5.3 Self-Organized Nanostructures6 In situ Growth Monitoring6.1 Surface Probes6.2 Electron Diffraction Techniques6.3 Optical Techniques7 Application of Surfactants7.1 Surfactant Effect7.2 Surfactant-Assisted Epitaxy8 Doping, Diffusion, and Contacts8.1 Doping of Semiconductors8.2 Diffusion8.3 Metal-Semiconductor Contact9 Methods of Epitaxy9.1 Liquid Phase Epitaxy9.2 Metallorganic Vapor Phase Epitaxy9.3 Molecular Beam Epitaxy10 Special Growth Techniques10.1 Growth of Buffer Layers10.2 Atomic Layer Epitaxy and Related Techniques10.3 Selective-Area Epitaxy10.4 Vapor-Liquid-Solid Growth
