This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications.
Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:
1: Associative Problems in Crossbar array and 3D architectures;
2: Selector Devices and Self-Selective Cells;
3: Integration of 3D RRAM;
4: Reliability Issues in 3D RRAM;
5: Applications of 3D RRAM beyond Storage.
The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Reihe
Sprache
Verlagsort
Verlagsgruppe
Zielgruppe
Für Beruf und Forschung
Academic, General, Postgraduate, Professional Practice & Development, Professional Reference, Professional Training, Undergraduate Advanced, and Undergraduate Core
Illustrationen
60 s/w Abbildungen, 33 s/w Photographien bzw. Rasterbilder, 27 s/w Zeichnungen, 1 s/w Tabelle
1 Tables, black and white; 27 Line drawings, black and white; 33 Halftones, black and white; 60 Illustrations, black and white
Maße
Höhe: 222 mm
Breite: 145 mm
Dicke: 10 mm
Gewicht
ISBN-13
978-1-032-48943-8 (9781032489438)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Klassifikation
Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.
1. Introduction
Qing Luo
2.Associative Problems in Crossbar array and 3D architectures
Qing Luo
3. Selector Devices and Self-selective cells
Yaxin Ding, Qing Luo
4. Integration of 3D RRAM
Qing Luo
5. Reliability issues of the 3D Vertical RRAM
Tiancheng Gong, Dengyun Lei
6. Applications of 3D RRAM Beyond Storage
Xumeng Zhang, Xiaoxin Xu, Jianguo Yang
7. Conclusion
Qing Luo
