Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
Sprache
Verlagsort
Verlagsgruppe
Zielgruppe
Für höhere Schule und Studium
Für Beruf und Forschung
Professional
Maße
Höhe: 234 mm
Breite: 156 mm
Gewicht
ISBN-13
978-0-7503-0731-4 (9780750307314)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Klassifikation
H. V. Klapdor-Kleingrothaus
Herausgeber*in
Max-Planck Institut f?r Kernphysik, Heidelberg, Germany
Introduction. Group IV alloy layers: growth and characterization. HBT principles. Model formulation. HBT: Device design and simulation. Strained-Si heterostructure FETs. Device design and simulation. Simulation applications: examples. SiGe HBT applications. Index.