Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.
This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.
Auflage
Sprache
Verlagsort
Zielgruppe
Für Beruf und Forschung
Materials Science and Physics researchers
Maße
Höhe: 276 mm
Breite: 216 mm
Gewicht
ISBN-13
978-0-12-812136-8 (9780128121368)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Klassifikation
Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
Herausgeber*in
The University of Nottingham, School of Physics and Astronomy, UK
1. Molecular beam epitaxy of transition metal monopnictides2. Migration Enhanced Epitaxy of Low Dimensional Structures3. MBE growth of Si-Ge materials and heterostructures4. SiGeSn MBE 5. MBE of Dilute Nitride Optoelectronic Devices6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications7. AlGaN nanowires for deep ultraviolet optoelectronics8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures 9. InAsBi and InAsSbBi materials10. Molecular beam epitaxy of GaAsBi and related quaternary alloys11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices12. NIL-based site-control epitaxy13. Droplet epitaxy of nanostructures14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications 16. ZnO Materials and Devices grown by MBE17. Epitaxial Systems Combining Oxides and Semiconductors18. Nanostructures of SiGe and ferromagnetic properties19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices20. Challenges and opportunities in MBE growth of 2D crystals: an overview21. Molecular beam epitaxy of graphene and hexagonal boron nitride22. MBE of Transition Metal Dichalcogenides and heterostructures23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth25. MBE of II-VI Lasers26. THz Quantum Cascade Lasers27. GaSb lasers grown on Silicon substrate for telecom application 28. GaP/Si based photovoltaic devices grown by MBE 29. MBE as a Mass Production Technique30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs31. Mass Production of Sensors Grown by MBE32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
