MOCVD of semi-insulating and high-purity III-V materials, H. Jurgensen; preparation and characterization of S.I. InP with low Fe-content by wafer annealing, G. Hirt et al; electrical properties of undoped InP crystals, A. Hruban et al; annealing of GaAs grown by vertical zone melting, P.E.R. Nordquist et al; P-type GaN formed via ion-implantation, diffusion or co-evaporation of Mg, N. Newman et al; Zn-related luminescence in GaN bulk crystal - pressure and temperature study, H. Teisseyre et al; the dependence of epitaxial layer quality on bulk and surface properties of GaAs substrates, W. Jantz; relation between EL2 metastable behavior and photosensitive centres in SI-GaAs, S.Y. Song et al; semi-insulating GaAs - Cu, B.H. Yang et al; prospects of LT GaAs for device applications, G.L. Witt. (Part Contents).
