Partial table of contents:
PLENARY LECTURES.
Sputtering Artifacts in SIMS Depth Profiles (invited) (P.Williams).
ISOTOPIC SIMS.
SIMS Studies of Corrosion in Nuclear Reactor Components (invited)(S. Bushby & G. Bickel).
BIOLOGICAL SIMS.
Mapping Phosphocholine Secondary Ion Emission from the Brain (P.Todd, et al.).
SEMICONDUCTOR CHARACTERIZATION -
TECHNIQUES.
The State of the Art of Two Dimensional Dopant Profiling (invited)(M. Dowsett).
SEMICONDUCTOR CHARACTERIZATION -
APPLICATIONS.
Characterization of GaN and Related Compounds by SIMS Analysis (Y.Gao, et al.).
ULTRA SHALLOW DEPTH PROFILING.
SIMS Depth Profiling of Ultra Shallow Implants and Junctions inSilicon -
Present Performance and Future Potential (invited) (M.Dowsett).
DEPTH PROFILING-FUNDAMENTAL/MODELING.
Ion Beam Induced Nitridation and Oxidation of Silicon (M. Petravc,et al.).
DEPTH PROFILING -
DIFFUSION.
Diffusion of Silicon in Ion Implanted GaAs (J. Likonen, etal.).
SPUTTER-INDUCED TOPOGRAPHY.
Surface Topography on InP Produced by Ion Bombardment (Y. Homma, etal.).
FUNDAMENTALS OF MOLECULAR DESORPTION.
Mechanistic Study of Particle Bombardment of an Alkanethiolate/AuSystem (K. Liu, et al.).
ORGANIC MATERIALS.
Depth Profiling Studies of Interfacial Phenomena in Polymer ThinFilms (Y. Strzhemechny, et al.).
PRACTICAL TOF SIMS.
Applications of Time-of-Flight SIMS in the Chemical Industry(invited) (K. Lloyd, et al.).
POLYATOMIC PRIMARY IONS.
Chemical Effects in Ion Formation Induced by Polyatomic Ion Impactson Inorganic Targets (R. English, et al.).
MATERIALS/SURFACE ANALYSIS.
The Use of Static and Dynamic SIMS in the Analysis of Ceramic andAmorphous Materials (E. Leone).
POSTIONIZATION.
Fundamental Investigations with Imaging Laser-SNMS (A. Schnieders,et al.).
INSTRUMENTATION.
A New Time-of-Flight Secondary Ion Mass Spectrometer with IntegralIon Gun (C. Lawrence, et al.).
GEOLOGICAL SIMS.
Rare Earth Elements Sensitivity Factors in Calcic Plagioclase(Anorthite) (C. Floss & B. Jolliff).
IMAGING.
Dynamic SIMS Imaging Using Sector Field Instruments (invited) (P.van der Heide).
FUNDAMENTALS OF SPUTTERING AND ION FORMATION.
Secondary Ion Emission from keV Cluster Impacts (invited) (M. VanStipdonk, et al.).
FUNDAMENTALS OF SPUTTERING-CLUSTER FORMATION.
Formation of Sputtered Semiconductor Clusters (R. Heinrich & A.Wucher).
QUANTITATIVE ANALYSIS.
Multiple Element Ion Implants for Metal Contamination Analysis inSemiconductor Technology (F. Stevie, et al.).
ENVIRONMENTAL/PARTICLE CHARACTERIZATION.
Disappearance Cross Sections of Ammonium Adsorbates onEnvironmental Surfaces (G. Groenewold, et al.).
RELATED TECHNIQUES.
Surface Analysis of all Elements with Isotopic Resolution at HighAmbient Pressures Using Ion Spectroscopic Techniques (V.Smentkowski, et al.).
Indexes.
