This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters.
All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
Rezensionen / Stimmen
This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced transistors, slow light production, and terahertz emission. Emphasis is put on directions of aluminum rich nitrides for UV operation and utilization of silicon substrates. * Gerald Bastard, Ecole Normale SupA (c)rieure *
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Höhe: 234 mm
Breite: 166 mm
Dicke: 39 mm
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ISBN-13
978-0-19-968172-3 (9780199681723)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Klassifikation
Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.
Herausgeber*in
Director of Research at CNRS, University of Montpellier 2
1. Development of the nitride-based UV/DUV LEDs ; 2. The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays ; 3. Epitaxial growth and benefits of GaN on silicon ; 4. The growth of bulk aluminum nitride ; 5. Epitaxial growth of nitride quantum dots ; 6. Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics ; 7. Growth and optical properties of aluminum rich AlGaN heterostructures ; 8. Optical and structural properties of InGaN light emitters on non- and semipolar GaN ; 9. GaN-based single-nanowire devices ; 10. Advanced photonic and nanophotonic devices ; 11. Nitride-based electron devices for high power / high frequency applications ; 12. Intersubband transitions in low dimensional nitrides ; 13. The slow light in gallium nitride ; 14. Nitride devices and their biofunctionalization for biosensing applications ; 15. Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides ; 16. Terahertz emission in polaritonic systems with nitrides
