Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983

Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.