Preface
PART I SEMICONDUCTOR FUNDAMENTALS
Chapter 1. Introduction
1.1 Historical Perspective
1.2 Future outlooks
Chapter 2. Atomic bonding and crystal structure
2.1 Crystal structures and symmetry
2.2 Ionic bond and inter-atomic forces
2.3 Covalent bond and sp3 hybrid orbit
2.4 Major semiconductor crystal structures
2.5 Reciprocal lattice, diffraction condition, and Brillouin zone
Chapter 3. Electronic band structures of solids
3.1 Free electron theory and density of states
3.2 Periodic crystal structures and Bloch's theorem
3.3 Nearly free-electron approximation and energy gap
3.4 The Kronig-Penney model
3.5 Effective mass
3.6 Band structures of common semiconductors
PART II. COMPOUND SEMICONDUCTOR MATERIALS
Chapter 4. Compound semiconductor crystals
4.1 Structural properties
4.2 Electrical properties
4.3 Free carrier concentration and Fermi integral
4.4 Surface states in compound semiconductors
4.5 III-V compound semiconductors
4.6 III-N and dilute III-V-N compound semiconductors
Chapter 5. Material technologies
5.1 Growth of bulk crystals
5.2 Epitaxy
5.3 Liquid phase epitaxy
5.4 Vapor phase epitaxy
5.5 Molecular beam epitaxy
PART III. PROPERTIES OF HETEROSTRUCTURES
Chapter 6. Heterostructure fundamentals
6.1 Energy band alignment
6.2 Strained layer structures
6.3 Strain effect on band-edge energies
6.4 Band-edge energies in strained ternary and quaternary alloys
6.5 Stained nitrides with wurtzite crystal structure
6.6 Construction of heterostructure band diagrams
Chapter 7. Electrical properties of compound semiconductor heterostructures
7.1 Abrupt heterojunction under equilibrium
7.2 p-N Heterojunction under bias
7.3 Quantum well heterostructures
7.4 Superlattices and minibands
7.5 Heterostructures in electric fields
7.6 Polarization fields in wurtzite quantum wells
Chapter 8. Optical properties of compound semiconductor heterostructures
8.1 Basic optical properties of dielectric medium
8.2 Absorption in semiconductors
8.3 Radiative transitions between discrete states
8.4 Optical transitions between energy bands
8.5 Non-radiative Auger recombination processes
PART IV. HETEROSTRUCTURE DEVICES
Chapter 9. Heterostructure electronic devices
9.1 Metal-semiconductor field-effect transistors (MESFETs)
9.2 Modulation doping and two-dimensional electron gas (2DEG)
9.3 High-electron mobility transistor (HEMT) basics - A triangular quantum well approach
9.4 Operation properties of the HEMT
9.5 Optimal design of the HEMT
9.6 GaN-based HEMT structures
9.7 Heterojunction bipolar transistors (HBTs)
Chapter 10. Semiconductor lasers and light-emitting diodes
10.1 Device physics of heterostructure lasers
10.2 Structures and properties of injection lasers
10.3 Quantum-well laser
10.4 Vertical cavity surface emitting lasers
10.5 Light-emitting diodes (LEDs)
10.6 Unipolar intersubband quantum cascade (QC) lasers
10.7 Transistor lasers
Appendix
A. Values of important physical constants
B. Important physical properties of some indirect semiconductors
C. Important physical properties of some direct III-V binary semiconductors
D. Important physical properties of wurtzite III-nitride semiconductors
E. Bandgap energy of III-V semiconductor ternary alloys
F. Bandgap and polarization parameters of wurtzite III-nitride semiconductor ternary alloys
