I. Instrumentation.- Instrumental Aspects of Spatially 3-Dimensional SIMS Analysis.- Some Problems of Construction Implied by Requirements of Up-To-Date SIMS Instrumentation.- Description and Applications of a New Design Cs+ Ion Source on the COALA Ion Microprobe for Negative Ion SIMS.- Operational Data of a Simple Microfocus Gun Using an EHD-Type Indium Ion Source.- First Results on a Scanning Ion Microprobe Equipped with an EHD-Type Indium Primary Ion Source.- Simple Double-Channel SIMS Instrument.- Principles and Applications of a Dual Primary Ion Source and Mass Filter for an Ion Microanalyser.- A Quadrupole Mass Spectrometer with Energy Filtering for SIMS Studies.- Development and Operation of Special SIMS-Equipment for Use in Iron and Steel Analysis.- Design Concept of a New Secondary Ion Optics System for Use with Quadrupole Mass Spectrometers.- Improved Analysis of Insulators in an ARL IMMA Using Positive Primary Ions and an Electron Gun.- Performance and Use of Dissector Ion Microanalyzer.- Distortion of Secondary Ion Extraction Due to Sample Surface Irregularities.- A Combined Direct Imaging Laser Ionization Secondary Ionization Mass Spectrometer.- Advances in Ion Probes A-DIDA.- A Novel Ion Etching Unit Applicable for Depth Profiling with SIMS and IIR.- Improvements and Applications of the Riber MIQ 156.- II. Fundamentals I. Ion Formation.- Molecule Formation in Oxide Sputtering.- Dependence of Ionization Yields Upon Elemental Composition; Isotopic Variations.- Measurements of the Energy Distributions of Positive Secondary Ions in the Energy Range from 0 to About 500 eV.- Ion Dose Effects in Static SIMS.- Current Density Effects on Secondary Ion Emission from Multicomponent Targets.- Isotope Effect in Secondary Ion Emission.- Caesiated Surfaces and Negative Ion Emission.- Secondary Ion Mass Spectrometry of Organic Compounds; A Comparison with Other Methods (EI, CI, FI, FD, FAB).- Secondary Ion Emission from NbV-Alloys.- III. Fundamentals Il. Depth Profiling.- Depth Profiling by SIMS: Depth Resolution, Dynamic Range and Sensitivity.- Disturbing Effects in Sputter Profiling.- The Theory of Concentration Depth Profiling by Sputter Etching.- Surface Topography Development During SIMS Investigations and Using it to Get Additional Information on Polycrystalline and Heterogeneous Solids.- Sputtering of Metals with 20 keV O2+; Characteristic Etch Patterns, Sputtered Atom Yields and Secondary Ion Mass Spectra.- Depth Resolution of Ion Bombardment Technique Applied to NiPd, PiPt, PtPd Thin Layer Systems.- The Influence of Ion Bombardment on the Results of AES-Depth Profiling on Silicides.- A Study of Secondary Ion Energy Distributions During Sputtering of MIS Layer Structures.- Structural Effects in SIMS at the Depth Profiling of Boron Implanted Silicon.- Comparison of Compositional Thin Film Depth Profiling Obtained by SIMS, IIR and AES.- IV. Quantification.- Quantification of SIMS.- Quantitative Chemical Analysis of Standard Iron Alloys by SIMS Technique.- Application of the LTE Model to Quantifying the Secondary Ion Spectra of Steels.- Modification of the MISR Method with the Use of Implantation of Standard Elements.- Use of Ionic Implantation for Quantification of SIMS Analysis in Metals and Oxides - Application to Corrosion Studies.- Secondary Ion Emission from Binary and Ternary Amorphous Alloys.- Experimental Procedures for Quantitative Analysis of Silicate Minerals.- SIMS Isotopic Measurements at High Mass Resolution.- Computer Peak Identification and Evaluation of SIMS Spectra.- V. Application I. Depth Profiling.- Depth Profiling of Copper Atoms Gettered in Ion-Damaged GaP.- The Optimisation of SIMS for the Analysis of Semiconductor Materials.- Impurity Redistribution in GaAs Epilayers.- Quantitative Distribution Analysis of B, As and P in Si for Process Simulation.- High Spatial Resolution SIMS Depth Profiling of Cr Dopant in CdSe Thin Film Transistors.- SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon.- Profiles of Implanted or Diffused Dopants (Be, Zn, Cr, Se) in Indium Phosphide.- Applications of SIMS in Studies of Slow Diffusion and Isotope Diffusion.- Rapid Diffusion and Gettering Studies of Bulk Oxygen in Silicon by Cs/SIMS.- Water Diffusion in Fused Silica and Iron-Making Slag.- Combined SIMS-AES-XPS Investigation of the Composition and Interface Structure of Anodic Oxide Layers on Cd0.2Hg0.8Te (CMT).- VI. Application II. Surface Studies, Ion Microscopy.- The Chemical Composition of Oxide Films on Aluminium and Its Influence on Surface Properties Studied by SIMS, XPS and AES.- Study of the Adsorption of Water on Titania by Secondary Ion Mass Spectrometry.- SIMS Studies on Oxygen Adsorption on Aluminium and Its Alloys.- Oxidation and Segregation at the Surfaces of Different Aluminium Foils and Sheets.- Oxygen Adsorption on Polycrystalline Pt3Pb at Elevated Temperatures. A SIMS Study.- SIMS Investigations on TiFe Nitrided by NH3-Pretreatment.- SIMS/TDMS Studies of Hydrocarbon Interaction with Nickel.- SIMS Investigation of Adsorption and Chemical Modification of C2H4 and C2H2 on a Polycrystalline Ni-Surface.- Secondary Ion Emission from UHV-Deposited Amino Acid Overlayers on Clean Metal Surfaces.- SIMS Investigation of Adsorption of O2, H2O, CO, CO2, CH2O, and CH3OH and Coadsorption of O2 with CH2O and CH3OH on Polycrystalline Silver Surfaces.- Distribution of Ni, Co, Ga, and Cu in Iron Meteorities.- Metallurgical Applications of Ionic Microscopy.- Secondary Ion Mass Spectrometry of Organic Compounds.- Index of Contributors.
