Advancing Silicon Carbide Electronics Technology II

Name: Advancing Silicon Carbide Electronics Technology II | Core Technologies of Silicon Carbide Device Processing
Brand: Materials Research Forum LLC
Price: 128.99 EUR
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Core Technologies of Silicon Carbide Device Processing

K. Vasilevskiy K. Zekentes(Herausgeber*in)

Materials Research Forum LLC (Verlag)

Erschienen am 15. März 2020

292 Seiten

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978-1-64490-067-3 (ISBN)

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Inhalt

Intro
Table of Contents
Preface
1 - Historical Introduction to Silicon Carbide Discovery, Properties and Technology
List of used symbols and abbreviations
1. Introduction
2. Discovery of silicon carbide
2.1 Acheson process
2.2 Silicon carbide in the nature
3. Silicon carbide material properties
3.1 Chemical bonds and crystal structure of silicon carbide
3.2 Crystal structure and notation of SiC polytypes
3.3 Stability, transformation and abundance of SiC polytypes
3.4 Chemical and physical properties of silicon carbide
3.5 Polytypism and electrical properties of silicon carbide
3.6 Silicon carbide as a material for high temperature electronics
3.7 Silicon carbide as a material for high power electronics
4. Silicon carbide in early radio technology
5. Electroluminescence of silicon carbide
6. Silicon carbide varistors
7. Lely platelets
8. Silicon carbide bulk crystal growth
9. Silicon carbide epitaxial growth
10. Emergence of industrial silicon carbide electronics
10.1 Foundation of Cree Research, Inc. and the first commercial blue LEDs
10.2 Industrial SiC wafer growth
10.3 Preconditions and demands for SiC power electronics
10.4 4H-SiC polytype as a material for power electronics
10.5 4H-SiC unipolar power devices
10.5.1 4H-SiC power Schottky diodes
10.5.2 4H-SiC power JFETs
10.5.3 4H-SiC power MOSFETs
10.6 Development of 4H-SiC power bipolar devices
10.6.1 Minority carrier lifetime enhancement
10.6.2 Suppressing stacking faults
10.6.3 Advanced 4H-SiC power bipolar devices
10.7 Emergence of automobile SiC power electronics
Conclusion
References
2 - Dielectrics in Silicon Carbide Devices: Technology and Application
List of used symbols and abbreviations
1. Introduction
1.1 Interface-trapped charge effects and requirements
1.2 Near-interface trap effects
1.3 SiC MOS interface requirements
2. Dielectrics in SiC device processing
2.1 Silicon dioxide in SiC devices
2.2 Silicon nitride in SiC devices
2.3 High-? dielectrics in SiC devices
3. Methods of dielectric deposition used in SiC device processing
3.1 Plasma enhanced chemical vapor deposition of dielectric on SiC
3.2 Deposition of silicon oxide films using TEOS
3.3 Atomic layer deposition of gate dielectrics in SiC devices
3.4 Densification of dielectrics deposited on SiC
3.5 Deposition methods conclusion
4. Thermal oxidation of SiC
4.1 SiC oxidation rates and a modified Deal-Grove model
4.2 Interface traps introduced during thermal oxidation of silicon carbide
4.3 High temperature oxidation
4.4 Low temperature oxidation
4.5 Post oxidation annealing
4.6 Thermal oxidation conclusion
5. Other methods to improve channel mobility
5.1 Sodium enhanced oxidation
5.2 Counter doped channel regions
5.3 Alternative SiC crystal faces
6. Surface passivation by dielectrics
7. Summary
Acknowledgements
References
3 - Silicon Carbide Doping by Ion Implantation
List of used symbols and abbreviations
1. Introduction
2. Ion implantation technique
2.1 Basics of ion implantation physics
2.2 Basics of ion implantation technology
3. Specificities of ion implantation in SiC
3.1 General considerations
3.2 SiC ion-implanted dopants
3.3 Implantation damage
3.4 Hot implantation
3.5 Post-implantation annealing. Activation and diffusion
3.6 SiC devices requirements
3.7 Other SiC implantation reviews
4. n-Type doping
4.1 n-Dopant atoms
4.2 Heating during implantation of n-dopants
5. p-Type doping
5.1 p-Type dopants
5.2 P-dopant atoms diffusion
5.3 Aluminum doping
5.4 Heating during implantation
6. Post-implantation annealing
6.1 Fast thermal annealing
6.2 Very high temperature conventional (CA) and microwave annealing (MWA)
6.3 Laser annealing
6.4 Others techniques
6.5 Optimization of post-implantation annealing in the case of Al-implantation
6.6 Surface roughness
6.8 Capping layer
6.9 Electrical activation
7. Crystal quality and electrically active defects
8. Channeling and straggling
8.1 Channeling in SiC crystal
8.2 Lateral/transverse straggling
8.3 Box profile
9. Plasma implantation
10. Ion implantation simulation
11. Diagnostic techniques of implanted layers
11.1 Secondary Ion Mass Spectroscopy (SIMS)
11.2 Electrical measurements
11.3 Rutherford backscattering spectrometry (RBS)
11.4 Transmission Electron Microscope (TEM)
11.5 Raman spectroscopy
11.6 X-ray diffraction (XRD)
11.7 Cross-section imaging techniques
12. Implant services suppliers
13. Implant tools for SiC
Conclusions and challenges
Acknowledgements
References
4 - Plasma Etching of Silicon Carbide
List of used abbreviations
1. Introduction
2. Gas chemistry - etching mechanisms
2.1 SiC etching gas chemistry
2.2 Surface carbon rich layer
2.3 Cl-based chemistry
2.4 Results relative to the use of different fluorinated gases
2.5 Role of additives (N2, H2, O2, Ar, He) in the gas mixture
3. Etch rate
3.1 Role of pressure
3.2 Role of substrate platen RF power / DC self-bias
3.3 Role of ICP RF power (source/coil power)
3.4 Role of gas flow
3.5 Role of crystal face
3.6 Role of doping type
3.7 Role of chamber/substrate electrode geometry
3.8 Role of substrate temperature
3.9 Loading effects
4. Morphology of etched surfaces/sidewalls
4.1 Micromasking
4.2 Micromasking after deep (& 10 µm) etching
4.3 Ion-etching induced polishing effect of SiC surfaces
4.4 Microtrenching effect
4.5 Isotropic etching
4.6 Sidewall shape
4.7 Sloped walls from sloped etch mask
4.8 Vertical scratches
5. Mask material (adherence, micromasking, selectivity)
6. Surface conditioning prior-to / following etching
7. Carrier of the SiC sample under etching
8. DRIE (Deep RIE) process in SiC: via-hole formation - MEMS
8.1 Continuous etching process
8.2 Bosch process
9. Nanopillar/nanowire formation
10. Electrical properties after etching
11. Main conclusions
Acknowledgements
References
5 - Plasma Etching of Silicon Carbide
1. Introduction
2. SiC nanoparticles
2.1 Si to SiC conversion based fabrication of SiC nanocrystals
2.2 Chemical vapor based fabrication of SiC nanocrystals
2.3 Electrochemical and chemical etching based methods for SiC nanocrystals formation
2.4 Chemical Synthesis of SiC nanocrystals
2.5 Formation of SiC nanocrystals by laser ablation
2.6 Other methods for formation of SiC nanocrystals
2.7 Other (non-cubic) polytype SiC nanocrystals formation
2.8 Formation of SiC hollow nanospheres, nanocages and core-shell nanospheres
2.9 Luminescence of SiC nanocrystals
2.10 Applications of SiC 0D nanostructures
3. Bottom-up growth of SiC nanowires and nanotubes
3.1 General description of bottom-up NW growth
3.1.1 Vapor-Liquid-Solid process
3.1.2 Vapor-Solid process
3.1.3 Solid-Liquid-Solid process
3.2 SiC nanowire growth without a template
3.2.1 Catalysts
3.2.2 Precursors and processes for 3C-SiC nanowire growth
3.3 Template assisted SiC nanowire growth
3.3.1 CNTs conversion into SiC NW and NT
3.3.2 Si NW conversion into Si/SiC core/shell NW, SiC NT and SiC NW
3.4 Conclusions on SiC NW bottom-up formation
4. Top-down formation of SiC NWs
5. Processing technology of SiC NW based devices
6. Functionalization of SiC nanostructures
7. Applications of SiC nanowires
Conclusions
Acknowledgements
References
Keyword Index
Author Index
About the Editors

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