It gives me great pleasure to learn that this book, whose ori gin owes much to the work of American scientists and engineers on semiconductor technology, will reach American and other English speaking readers. I am grateful to Plenum Publishing Corporation for arranging the American edition of this book and to Mr. Albin Tybulewicz for his translation, September 5, 1968 Yu. R. Nosov v Preface to the Russian Edition One of the most important applications of semiconductor diodes is their use in electronic pulse circuits. The response of these diodes under switching conditions is governed by the phenomena of accumulation and dispersal of non equlibrium carriers, which are also observed in other p-n junction devices. It was found in the late 1940's that when point-contact ger manium diodes were used in circuits through which short (several tenths of a microsecond) electrical pulses were being passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance of this phenomenon in the efforts to reduce the response time of pulse circuits, many investigations of the phenomenon were carried out and these investigations pro vided the basis of a theory of transient processes in semiconductor diodes.
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ISBN-13
978-1-4684-8193-8 (9781468481938)
DOI
10.1007/978-1-4684-8193-8
Schweitzer Klassifikation
I. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions.- §1. Introduction.- §2. Transformation of Basic Equations.- §3. Solution of the Diffusion Equation (at Low Injection Levels).- II. Switching in a Planar Diode.- §4. Transient Processes without a Limiting Resistance in the Diode Circuit.- §5. Switching of a Diode Circuit with a Limiting Resistance.- §6. Switching of a Diode Circuit with an Infinite Resistance.- §7. Small-Signal Transient Characteristics of a Diode.- §8. Methods for the Observation of Transient Processes in Diodes.- §9. Main Experimental Results.- III. Planar Diode with a Thin Base.- §10. Steady-State Distribution of Holes in the Base.- §11. Switching without a Resistance in the Diode Circuit.- §12. Switching in a Circuit with a Limiting Resistance.- §13. General Estimate of the Response of a Thin-Base Diode.- IV. Transient Processes in a Diode with a Small-Area Rectifying Contact.- §14. Ideal Model of a Point-Contact Diode.- §15. Transient Conditions.- §16. Experimental Investigations.- V. Effect of an Electric Field in a Diode Base on Transient Processes.- §17. Built-in Internal Field in a Diode Base.- §18. Forward-Biased Diode with a Built-in Field.- §19. First (Recovery) Phase.- §20. Reverse Current Decay.- VI. Transient Processes in Diodes During the Passage of a Forward Current Pulse.- §21. Introduction.- §22. Establishment of a Forward Resistance in a Planar Diode.- §23. Establishment of a Forward Voltage Across a Diode with a Hemispherical p-n Junction.- VII. Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory.- §24. Introduction.- §25. Lifetime of Holes under Various Recombination Conditions.- §26. Influence of Trapping Levels on Transient Processes inDiodes.- §27. Recombination Properties of Gold-Doped Germanium and Silicon.- Literature Cited.
