
Fundamentals of RF and Microwave Transistor Amplifiers
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Inhalt
- Intro
- Fundamentals of RF and Microwave Transistor Amplifiers
- Contents in Brief
- Contents
- Foreword
- Preface
- 1. Introduction
- 1.1. Transistor Amplifier
- 1.2. Early History of Transistor Amplifiers
- 1.3. Benefits of Transistor Amplifiers
- 1.4. Transistors
- 1.5. Design of Amplifiers
- 1.6. Amplifier Manufacturing Technologies
- 1.7. Applications of Amplifiers
- 1.8. Amplifier Cost
- 1.9. Current Trends
- 1.10. Book Organization
- References
- 2. Linear Network Analysis
- 2.1. Impedance Matrix
- 2.2. Admittance Matrix
- 2.3. ABCD Parameters
- 2.4. S-Parameters
- 2.4.1. S-Parameters for a One-Port Network
- 2.5. Relationships Between Various Two-Port Parameters
- References
- Problems
- 3. Amplifier Characteristics and Definitions
- 3.1. Bandwidth
- 3.2. Power Gain
- 3.3. Input and Output VSWR
- 3.4. Output Power
- 3.5. Power Added Efficiency
- 3.6. Intermodulation Distortion
- 3.6.1. IP3
- 3.6.2. ACPR
- 3.6.3. EVM
- 3.7. Harmonic Power
- 3.8. Peak-to-Average Ratio
- 3.9. Combiner Efficiency
- 3.10. Noise Characterization
- 3.10.1. Noise Figure
- 3.10.2. Noise Temperature
- 3.10.3. Noise Bandwidth
- 3.10.4. Optimum Noise Match
- 3.10.5. Constant Noise Figure and Gain Circles
- 3.10.6. Simultaneous Input and Noise Match
- 3.11. Dynamic Range
- 3.12. Multistage Amplifier Characteristics
- 3.12.1. Multistage IP3
- 3.12.2. Multistage PAE
- 3.12.3. Multistage NF
- 3.13. Gate and Drain Pushing Factors
- 3.14. Amplifier Temperature Coefficient
- 3.15. Mean Time to Failure
- References
- Problems
- 4. Transistors
- 4.1. Transistor Types
- 4.2. Silicon Bipolar Transistor
- 4.2.1. Figure of Merit
- 4.2.2. High-Frequency Noise Performance of Silicon BJT
- 4.2.3. Power Performance
- 4.3. GaAs MESFET
- 4.3.1. Small-Signal Equivalent Circuit
- 4.3.2. Figure of Merit
- 4.3.3. High-Frequency Noise Properties of MESFETs
- 4.4. Heterojunction Field Effect Transistor
- 4.4.1. High-Frequency Noise Properties of HEMTs
- 4.4.2. Indium Phosphide pHEMTs
- 4.5. Heterojunction Bipolar Transistors
- 4.5.1. High-Frequency Noise Properties of HBTs
- 4.5.2. SiGe Heterojunction Bipolar Transistors
- 4.6. MOSFET
- References
- Problems
- 5. Transistor Models
- 5.1. Transistor Model Types
- 5.1.1. Physics/Electromagnetic Theory Based Models
- 5.1.2. Analytical or Hybrid Models
- 5.1.3. Measurement Based Models
- 5.2. MESFET Models
- 5.2.1. Linear Models
- 5.2.2. Nonlinear Models
- 5.3. pHEMT Models
- 5.3.1. Linear Models
- 5.3.2. Nonlinear Models
- 5.4. HBT Model
- 5.5. MOSFET Models
- 5.6. BJT Models
- 5.7. Transistor Model Scaling
- 5.8. Source-Pull and Load-Pull Data
- 5.8.1. Theoretical Load-Pull Data
- 5.8.2. Measured Power and PAE Source Pull and Load Pull
- 5.8.3. Measured IP3 Source and Load Impedance
- 5.8.4. Source and Load Impedance Scaling
- 5.9. Temperature-Dependent Models
- References
- Problems
- 6. Matching Network Components
- 6.1. Impedance Matching Elements
- 6.2. Transmission Line Matching Elements
- 6.2.1. Microstrip
- 6.2.2. Coplanar Lines
- 6.3. Lumped Elements
- 6.3.1. Capacitors
- 6.3.2. Inductors
- 6.3.3. Resistors
- 6.4. Bond Wire Inductors
- 6.4.1. Single Wire
- 6.4.2. Ground Plane Effect
- 6.4.3. Multiple Wires
- 6.4.4. Maximum Current Handling of Wire
- 6.5. Broadband Inductors
- References
- Problems
- 7. Impedance Matching Techniques
- 7.1. One-Port and Two-Port Networks
- 7.2. Narrowband Matching Techniques
- 7.2.1. Lumped-Element Matching Techniques
- 7.2.2. Transmission Line Matching Techniques
- 7.3. WideBand Matching Techniques
- 7.3.1. Gain-Bandwidth Limitations
- 7.3.2. Lumped-Element Wideband Matching Techniques
- 7.3.3. Transmission Line Wideband Matching Networks
- 7.3.4. Balun-Type Wideband Matching Techniques
- 7.3.5. Bridged-T Matching Network
- References
- Problems
- 8. Amplifier Classes and Analyses
- 8.1. Classes of Amplifiers
- 8.2. Analysis of Class-A Amplifiers
- 8.3. Analysis of Class-B Amplifiers
- 8.3.1. Single-Ended Class-B Amplifier
- 8.3.2. Push-Pull Class-B Amplifier
- 8.3.3. Overdriven Class-B Amplifier
- 8.4. Analysis of Class-C Amplifiers
- 8.5. Analysis of Class-E Amplifiers
- 8.6. Analysis of Class-F Amplifiers
- 8.7. Comparison of Various Amplifier Classes
- References
- Problems
- 9. Amplifier Design Methods
- 9.1. Amplifier Design
- 9.1.1. Transistor Type and Fabrication Technology
- 9.1.2. Transistor Size Selection
- 9.1.3. Design Method
- 9.1.4. Circuit Topology
- 9.1.5. Circuit Analysis and Optimization
- 9.1.6. Stability and Thermal Analyses
- 9.2. Amplifier Design Techniques
- 9.2.1. Load-Line Method
- 9.2.2. Low Loss Match Design Technique
- 9.2.3. Nonlinear Design Method
- 9.2.4. Taguchi Experimental Method
- 9.3. Matching Networks
- 9.3.1. Reactive/Resistive
- 9.3.2. Cluster Matching Technique
- 9.4. Amplifier Design Examples
- 9.4.1. Low-Noise Amplifier Design
- 9.4.2. Maximum Gain Amplifier Design
- 9.4.3. Power Amplifier Design
- 9.4.4. Multistage Driver Amplifier Design
- 9.4.5. GaAs HBT Power Amplifer
- 9.5. Silicon Based Amplifier Design
- 9.5.1. Si IC LNA
- 9.5.2. Si IC Power Amplifiers
- References
- Problems
- 10. High-Efficiency Amplifier Techniques
- 10.1. High-Efficiency Design
- 10.1.1. Overdriven Amplifier Design
- 10.1.2. Class-B Amplifier Design
- 10.1.3. Class-E Amplifier Design
- 10.1.4. Class-F Amplifier Design
- 10.2. Harmonic Reaction Amplifier
- 10.3. Harmonic Injection Technique
- 10.4. Harmonic Control Amplifier
- 10.5. High-PAE Design Considerations
- 10.5.1. Harmonic Tuning Bench
- 10.5.2. Matching Network Loss Calculation
- 10.5.3. Matching Network Loss Reduction
- References
- Problems
- 11. Broadband Amplifier Techniques
- 11.1. Transistor Bandwidth Limitations
- 11.1.1. Transistor Gain Roll-off
- 11.1.2. Variable Device Input and Output Impedance
- 11.1.3. Power-Bandwidth Product
- 11.2. Broadband Amplifier Techniques
- 11.2.1. Reactive/Resistive Topology
- 11.2.2. Feedback Amplifiers
- 11.2.3. Balanced Amplifiers
- 11.2.4. Distributed Amplifiers
- 11.2.5. Active Matching Broadband Technique
- 11.2.6. Cascode Configuration
- 11.2.7. Comparison of Broadband Techniques
- 11.3. Broadband Power Amplifier Design Considerations
- 11.3.1. Topology Selection
- 11.3.2. Device Aspect Ratio
- 11.3.3. Low-Loss Matching Networks
- 11.3.4. Gain Flatness Technique
- 11.3.5. Harmonic Termination
- 11.3.6. Thermal Design
- References
- Problems
- 12. Linearization Techniques
- 12.1. Nonlinear Analysis
- 12.1.1. Single-Tone Analysis
- 12.1.2. Two-Tone Analysis
- 12.2. Phase Distortion
- 12.3. Linearization of Power Amplifiers
- 12.3.1. Pulsed-Doped Devices and Optimum Match
- 12.3.2. Predistortion Techniques
- 12.3.3. Feedforward Technique
- 12.4. Efficiency Enhancement Techniques for Linear Amplifiers
- 12.4.1. Chireix Outphasing
- 12.4.2. Doherty Amplifier
- 12.4.3. Envelope Elimination and Restoration
- 12.4.4. Bias Adaptation
- 12.5. Linear Amplifier Design Considerations
- 12.5.1. Amplifier Gain
- 12.5.2. Minimum Source and Load Mismatch
- 12.6. Linear Amplifier Design Examples
- References
- Problems
- 13. High-Voltage Power Amplifier Design
- 13.1. Performance Overview of High-Voltage Transistors
- 13.1.1. Advantages
- 13.1.2. Applications
- 13.2. High-Voltage Transistors
- 13.2.1. Si Bipolar Junction Transistors
- 13.2.2. Si LDMOS Transistors
- 13.2.3. GaAs FieldPlate MESFETs
- 13.2.4. GaAs FieldPlate pHEMTs
- 13.2.5. GaAs HBTs
- 13.2.6. SiC MESFET
- 13.2.7. SiC GaN HEMTs
- 13.3. High-Power Amplifier Design Considerations
- 13.3.1. Thermal Design of Active Devices
- 13.3.2. Power Handling of Passive Components
- 13.4. Power Amplifier Design Examples
- 13.4.1. HV Hybrid Amplifiers
- 13.4.2. HV Monolithic Amplifiers
- 13.5. Broadband HV Amplifiers
- 13.6. Series FET Amplifiers
- References
- Problems
- 14. Hybrid Amplifiers
- 14.1. Hybrid Amplifier Technologies
- 14.2. Printed Circuit Boards
- 14.3. Hybrid Integrated Circuits
- 14.3.1. Thin-Film MIC Technology
- 14.3.2. Thick-Film MIC Technology
- 14.3.3. Cofired Ceramic and Glass-Ceramic Technology
- 14.4. Design of Internally Matched Power Amplifiers
- 14.5. Low-Noise Amplifiers
- 14.5.1. Narrowband Low-Noise Amplifier
- 14.5.2. Ultra-wideband Low-Noise Amplifier
- 14.5.3. Broadband Distributed LNA
- 14.6. Power Amplifiers
- 14.6.1. Narrowband Power Amplifier
- 14.6.2. Broadband Power Amplifier
- References
- Problems
- 15. Monolithic Amplifiers
- 15.1. Advantages of Monolithic Amplifiers
- 15.2. Monolithic IC Technology
- 15.2.1. MMIC Fabrication
- 15.2.2. MMIC Substrates
- 15.2.3. MMIC Active Devices
- 15.2.4. MMIC Matching Elements
- 15.3. MMIC Design
- 15.3.1. CAD Tools
- 15.3.2. Design Procedure
- 15.3.3. EM Simulators
- 15.4. Design Examples
- 15.4.1. Low-Noise Amplifier
- 15.4.2. High-Power Limiter/LNA
- 15.4.3. Narrowband PA
- 15.4.4. Broadband PA
- 15.4.5. Ultra-Wideband PA
- 15.4.6. High-Power Amplifier
- 15.4.7. High-Efficiency PA
- 15.4.8. Millimeter-Wave PA
- 15.4.9. Wireless Power Amplifier Design Example
- 15.5. CMOS Fabrication
- References
- Problems
- 16. Thermal Design
- 16.1. Thermal Basics
- 16.2. Transistor Thermal Design
- 16.2.1. Cooke Model
- 16.2.2. Single-Gate Thermal Model
- 16.2.3. Multiple-Gate Thermal Model
- 16.3. Amplifier Thermal Design
- 16.4. Pulsed Operation
- 16.5. Heat Sink Design
- 16.5.1. Convectional and Forced Cooling
- 16.5.2. Design Example
- 16.6. Thermal Resistance Measurement
- 16.6.1. IR Image Measurement
- 16.6.2. Liquid Crystal Measurement
- 16.6.3. Electrical Measurement Technique
- References
- Problems
- 17. Stability Analysis
- 17.1. Even-Mode Oscillations
- 17.1.1. Even-Mode Stability Analysis
- 17.1.2. Even-Mode Oscillation Suppression Techniques
- 17.2. Odd-Mode Oscillations
- 17.2.1. Odd-Mode Stability Analysis
- 17.2.2. Odd-Mode Oscillation Suppression Techniques
- 17.2.3. Instability in Distributed Amplifiers
- 17.3. Parametric Oscillations
- 17.4. Spurious Parametric Oscillations
- 17.5. Low-Frequency Oscillations
- References
- Problems
- 18. Biasing Networks
- 18.1. Biasing of Transistors
- 18.1.1. Transistor Bias Point
- 18.1.2. Biasing Schemes
- 18.2. Biasing Network Design Considerations
- 18.2.1. Microstrip Biasing Circuit
- 18.2.2. Lumped-Element Biasing Circuit
- 18.2.3. High-PAE Biasing Circuit
- 18.2.4. Electromigration Current Limits
- 18.3. Self-Bias Technique
- 18.4. Biasing Multistage Amplifiers
- 18.5. Biasing Circuitry for Low-Frequency Stabilization
- 18.6. Biasing Sequence
- References
- Problems
- 19. Power Combining
- 19.1. Device-Level Power Combining
- 19.2. Circuit-Level Power Combining
- 19.2.1. Graceful Degradation
- 19.2.2. Power Combining Efficiency
- 19.3. Power Dividers, Hybrids, and Couplers
- 19.3.1. Power Dividers
- 19.3.2. 90° Hybrids
- 19.3.3. Coupled-Line Directional Couplers
- 19.4. N-Way Combiners
- 19.5. Corporate Structures
- 19.6. Power Handling of Isolation Resistors
- 19.7. Spatial Power Combiners
- 19.8. Comparison of Power Combining Schemes
- References
- Problems
- 20. Integrated Function Amplifiers
- 20.1. Integrated Limiter/LNA
- 20.1.1. Limiter/LNA Topology
- 20.1.2. Limiter Requirements
- 20.1.3. Schottky Diode Design and Limiter Configuration
- 20.1.4. 10-W Limiter/LNA Design
- 20.1.5. Test Data and Discussions
- 20.2. Transmitter Chain
- 20.2.1. Variable Gain Amplifier
- 20.2.2. Variable Power Amplifier
- 20.2.3. Amplifier Temperature Compensation
- 20.2.4. Power Monitor/Detector
- 20.2.5. Protection Against Load Mismatch
- 20.3. Cascading of Amplifiers
- References
- Problems
- 21. Amplifier Packages
- 21.1. Amplifier Packaging Overview
- 21.1.1. Brief History
- 21.1.2. Types of Packages
- 21.2. Materials for Packages
- 21.2.1. Ceramics
- 21.2.2. Polymers
- 21.2.3. Metals
- 21.3. Ceramic Package Design
- 21.3.1. Design of RF Feedthrough
- 21.3.2. Cavity Design
- 21.3.3. Bias Lines
- 21.3.4. Ceramic Package Construction
- 21.3.5. Ceramic Package Model
- 21.4. Plastic Package Design
- 21.4.1. Plastic Packages
- 21.4.2. Plastic Package Model
- 21.5. Package Assembly
- 21.5.1. Die Attach
- 21.5.2. Die Wire Bonding
- 21.5.3. Assembly of Ceramic Packages
- 21.5.4. Assembly of Plastic Packages
- 21.5.5. Hermetic Sealing and Encapsulation
- 21.6. Thermal Considerations
- 21.7. CAD Tools For Packages
- 21.8. Power Amplifier Modules
- References
- Problems
- 22. Transistor and Amplifier Measurements
- 22.1. Transistor Measurements
- 22.1.1. I-V Measurements
- 22.1.2. S-Parameter Measurements
- 22.1.3. Noise Parameter Measurements
- 22.1.4. Source-Pull and Load-Pull Measurements
- 22.2. Amplifier Measurements
- 22.2.1. Measurements Using RF Probes
- 22.2.2. Driver Amplifier and HPA Test
- 22.2.3. Large-Signal Output VSWR
- 22.2.4. Noise Figure Measurements
- 22.3. Distortion Measurements
- 22.3.1. AM-AM and AM-PM
- 22.3.2. IP3/IM3 Measurement
- 22.3.3. ACPR Measurement
- 22.3.4. NPR Measurement
- 22.3.5. EVM Measurement
- 22.4. Phase Noise Measurement
- 22.5. Recovery Time Measurement
- References
- Problems
- Appendix A. Physical Constants and Other Data
- Appendix B. Units and Symbols
- Appendix C. Frequency Band Designations
- Appendix D. Decibel Units (dB)
- Appendix E. Mathematical Relationships
- Appendix F. Smith Chart
- Appendix G. Graphical Symbols
- Appendix H. Acronyms and Abbreviations
- Appendix I. List Of Symbols
- Appendix J. Multiple Access and Modulation Techniques
- Index
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