Principles of Semiconductor Processes and Device Technology

CHAPTER 1: SEMICONDUCTOR PHYSICS
1.1 Introduction
1.2 Properties of Semiconductors
1.3 Crystal Structure and Types of Semiconductors
1.4 Carrier Transport
1.5 Doping Process
1.6 Energy Band Theory
1.7 PN Junctions

CHAPTER 2: SYNTHESIS AND CHARACTERIZATION OF OPTOELECTRONIC MATERIALS
2.1 Introduction
2.2 Synthesis of Semiconductors
2.3 Characterization

CHAPTER 3: EUV LITHOGRAPHY PROCESS OF SEMICONDUCTOR DEVICES
3.1 Introduction
3.2 EUV Lithography System and Working Principles
3.3 Development of Resist for EUV Lithography
3.4 Mask Materials and Designs for EUV Lithography
3.5 Conclusions and Perspectives

CHAPTER 4: TRANSISTORS
4.1 Bipolar Transistors
4.2 Field-Effect Transistors
4.3 Thin-Film Transistors

CHAPTER 5: LUMINESCENT MATERIALS AND DEVICES
5.1 Introduction
5.2 Principle of Semiconductor Luminescence
5.3 Structure and Feature of LEDs
5.4 Process of LEDs
5.5 GaN LEDs
5.6 Perovskite LEDs
5.7 White LEDs

CHAPTER 6: SUPERLUMINESCENT LIGHT EMITTING DIODES
6.1 Introduction
6.2 History of SLED
6.3 Principle of Active-MMI SLED
6.4 Merit and Results of Active-MMI SLED

CHAPTER 7: SOLAR CELLS
7.1 Introduction
7. 2 Basic Principles of Solar Cells
7.3 Typical Solar Cells
7.4 Manufacturing of Solar Cells
7.5 Applications of Solar Cells
7.6 Conclusion

CHAPTER 8: PHOTODETECTORS
8.1 Introduction
8.2 Principle of Photodetectors
8.3 General Metrics of Photodetectors
8.4 Perovskite Photodetectors
8.5 Metal-Semiconductor-Metal Photodetectors
8.6 Organic Photomultiplication Detectors

CHAPTER 9: GRAPHENE AND GRAPHENE-BASED DEVICES
9.1 Introduction
9.2 Structure and Properties of Graphene
9.3 Preparation Methods of Graphene
9.4 Graphene-Based Devices
9.5 Future of Graphene-Based Devices