
Subsecond Annealing of Advanced Materials
Annealing by Lasers, Flash Lamps and Swift Heavy Ions
Springer (Publisher)
Published on 30. December 2013
Book
Hardback
XVII, 321 pages
978-3-319-03130-9 (ISBN)
Description
The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
More details
Series
Edition
2014 ed.
Language
English
Place of publication
Cham
Switzerland
Publishing group
Springer International Publishing
Target group
Professional and scholarly
Research
Illustrations
146 s/w Abbildungen, 59 farbige Abbildungen
XVII, 321 p. 205 illus., 59 illus. in color.
Dimensions
Height: 241 mm
Width: 160 mm
Thickness: 24 mm
Weight
676 gr
ISBN-13
978-3-319-03130-9 (9783319031309)
DOI
10.1007/978-3-319-03131-6
Schweitzer Classification
Other editions
Additional editions

Wolfgang Skorupa | Heidemarie Schmidt
Subsecond Annealing of Advanced Materials
Annealing by Lasers, Flash Lamps and Swift Heavy Ions
Book
08/2016
Springer
€53.49
Shipment within 10-15 days

Wolfgang Skorupa | Heidemarie Schmidt
Subsecond Annealing of Advanced Materials
Annealing by Lasers, Flash Lamps and Swift Heavy Ions
E-Book
12/2013
1st Edition
Springer
€53.49
Available for download
Content
From the Contents: The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.