Advances in Silicon Carbide Processing and Applications
1st Edition
Published on 1. January 2003
228 pages
978-1-58053-741-4 (ISBN)
Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.
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Anant Agarwal | Stephen Saddow
Advances in Silicon Carbide Processing and Applications
Book
07/2004
Artech House Publishers
€138.38
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Content
- Advances in Silicon Carbide Processing and Applications
- Contents vii
- Preface xi
- Acknowledgments xiii
- Chapter 1 Silicon Carbide Overview 1
- 1.1 General Properties 1
- 1.2 History 4
- 1.3 Crystalline Structure 8
- 1.4 Crystal Growth 11
- 1.5 Epitaxial Growth 18
- 1.6 Defects 21
- 1.7 Commercial Outlook 22
- 1.8 Summary 25
- References 26
- Chapter 2 High-Temperature SiC-FET Chemical Gas Sensors 29
- 2.1 Introduction 29
- 2.2 Detection Mechanism of Field-Effect Gas Sensors 30
- 2.3 Field-Effect Chemical Gas Sensor Devices 38
- 2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen 49
- 2.5 More Sensor Properties 53
- 2.6 Experimental 57
- 2.7 Applications 59
- 2.8 Outlook and Conclusions 62
- Acknowledgments 63
- References 63
- Chapter 3 Silicon Carbide Technology and Power Electronics Applications 69
- 3.1 DC-DC Conversion 69
- 3.2 DC-AC Power Conversion 80
- 3.3 Pulsed-Power Applications 91
- 3.4 Thermal Management and High-Voltage Packaging 97
- 3.5 Summary 106
- References 106
- Chapter 4 Advances in Selective Doping of SiC Via Ion Implantation 109
- 4.1 Introduction 109
- 4.2 As-Implanted Profiles 114
- 4.3 Implant Annealing 128
- 4.4 Technology Barriers and Suggestions for Future Work 147
- References 148
- Chapter 5 Power SiC MOSFETS 155
- 5.1 Introduction 155
- 5.2 SiC UMOSFET 156
- 5.3 SiC DIMOSFET 163
- 5.4 SiC LDMOS 169
- 5.5 Summary and Future Development 171
- References 172
- Chapter 6 Power and RF BJTs in 4H-SiC: Device Design and Technology 177
- 6.1 Introduction 177
- 6.2 Device Structures and Operation of Power BJTs 177
- 6.3 Design of the Epitaxial Power BJT 181
- 6.4 Process Integration 186
- 6.5 1.2-kV Power BJTs 188
- 6.6 Design and Fabrication of UHF Transistors 192
- 6.7 Future Work 199
- References 200
- About the Editors 203
- Index 205
